AUIRF3415

Description：MOSFET N-CH 150V 43A TO220AB
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:26f418de3110 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRF3415 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 150V 43A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRF3415

Description：MOSFET N-CH 150V 43A TO220AB
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：150 V
Current - Continuous Drain (Id) @ 25°C：43A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：42mOhm @ 22A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：200 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2400 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：200W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for AUIRF3415

AUIRF3415

Single FETs, MOSFETs Overview

The AUIRF3415 is an automotive-grade N-channel HEXFET power MOSFET in a TO-220AB package. It features a maximum drain-source voltage of 150V and a continuous drain current of 43A at 25°C case temperature. The device has a maximum on-resistance of 0.042Ω at VGS=10V. Total gate charge is 200nC, with a typical avalanche energy rating of 590mJ. It operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

Automotive qualification compliant with AEC-Q101 standards for reliability
Optimized low on-resistance per silicon area for high efficiency
Ruggedized design supporting fast switching speeds
High pulse diode recovery dv/dt capability

Single FETs, MOSFETs Applications

Automotive power distribution systems
Low-side switching applications
Motor control circuits
Load management modules

Single FETs, MOSFETs Procurement Notes

Verify the component matches the specific automotive grade designation. Confirm the package type is TO-220AB. Ensure the datasheet version aligns with the manufacturing date code. Check for RoHS compliance status if required by the assembly process. Validate that the supplier provides traceability documentation consistent with automotive supply chain requirements.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust automotive-grade performance. Consider the thermal resistance characteristics for heat sink sizing. Evaluate the gate charge requirements against the driver capabilities. Assess the pulsed drain current limits for transient load conditions. Verify the breakdown voltage exceeds the maximum system operating voltage.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It utilizes advanced processing techniques to achieve low on-resistance. The 'AU' prefix indicates it meets specific automotive industry requirements for product discontinuance and process change notifications.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 150V rating, 43A current capacity, and TO-220AB package. Verify equivalent RDS(on) and gate charge specifications. Ensure any substitute also holds AEC-Q101 certification for automotive use.