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Product Detailed Parameters
- Description：MOSFET 2N-CH 50V 3A 8SO
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：50V
- Current - Continuous Drain (Id) @ 25°C：3A
- Rds On (Max) @ Id, Vgs：130mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：255pF @ 25V
- Power - Max：2.4W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The AUIRF7103Q is an automotive-grade dual N-channel HEXFET power MOSFET in an SO-8 package. It features a drain-source breakdown voltage of 50V and a continuous drain current of 3.0A at 25°C, with a maximum on-resistance of 130mΩ at VGS=10V. The device supports a gate-to-source voltage of ±20V and operates within a junction temperature range of -55°C to +175°C. Key dynamic characteristics include a total gate charge of 10nC (typical) and a peak diode recovery dv/dt rating of 12V/ns.
Feature Summary
- Automotive qualified per AEC-Q101 standards for high reliability
- Dual N-channel configuration with advanced planar technology
- Logic level gate drive capability for efficient control
- Repetitive avalanche allowed up to maximum junction temperature
Applications
- Automotive electronic systems requiring ruggedized switching
- Low-voltage DC-DC converter circuits
- Motor control applications utilizing logic-level inputs
Procurement Notes
Verify the specific suffix against official Infineon documentation to confirm exact packaging and qualification status. Ensure the component meets the required AEC-Q101 automotive grade specifications for your target application environment. Cross-reference the datasheet revision history to validate parameter consistency before finalizing procurement orders.
Selection Notes
Select this component for designs requiring dual N-channel switching with automotive durability. The low on-resistance and fast switching speeds make it suitable for efficiency-critical power management tasks. Verify that the thermal resistance and power dissipation limits align with the system's heat sinking capabilities under maximum load conditions.
Part Context
This part belongs to Infineon's HEXFET family, known for robust performance in power switching applications. The 'AU' prefix indicates automotive qualification, distinguishing it from standard industrial or consumer variants. It utilizes planar technology to achieve low on-resistance per silicon area while maintaining high reliability.
Replacement Considerations
Consult the official cross-reference search tool for verified substitutes. Ensure any replacement matches the SO-8 package, 50V rating, and dual N-channel configuration. Verify that alternative parts meet the same AEC-Q101 automotive qualification requirements.
FAQ
Is the AUIRF7103Q qualified for automotive applications?
Yes, the component is specifically designed for automotive applications and has passed AEC-Q101 qualification.
What is the maximum operating junction temperature?
The maximum operating junction temperature is +175°C.
Does the device support repetitive avalanche operation?
Yes, the datasheet confirms that repetitive avalanche is allowed up to the maximum junction temperature.
