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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 5.3A 8SOIC
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：5.3A
- Rds On (Max) @ Id, Vgs：50mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id：3V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：515pF @ 25V
- Power - Max：2.4W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The AUIRF7303QTR is an automotive-grade dual N-channel HEXFET power MOSFET in an SO-8 package. It features a maximum drain-source voltage of 30 V and a continuous drain current of 5.3 A at 25°C. The device offers a maximum on-resistance of 0.05 Ω at VGS=10V and supports a junction temperature up to 175°C. It includes logic-level gate drive, fast switching capabilities, and repetitive avalanche energy ratings.
Feature Summary
- Automotive qualified per AEC-Q101 standards
- Dual N-channel planar technology for low on-resistance
- Logic level gate drive capability
- Fast switching speed with dynamic dv/dt rating
Applications
- Automotive power management circuits
- Low-side switching applications
- Motor control systems
Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to confirm package type and reel quantity. Ensure the component meets the required AEC-Q101 qualification level for your target application environment. Cross-reference datasheet revision history for any updates to electrical characteristics or thermal parameters before finalizing procurement specifications.
Selection Notes
Select this component when designing for automotive environments requiring robust dual N-channel switching. Consider the 175°C operating temperature range and low RDS(on) for efficiency. Evaluate the total gate charge and switching times against your driver capabilities to optimize performance and minimize losses in high-frequency applications.
Part Context
This part belongs to Infineon's HEXFET family, utilizing advanced planar technology for improved performance. It is specifically engineered for automotive reliability, offering ruggedized design features such as repetitive avalanche allowance. The dual configuration allows for compact circuit designs in space-constrained automotive modules.
Replacement Considerations
Consult official cross-reference tools for verified substitutes. Ensure replacement parts match the SO-8 footprint, 30V rating, and dual N-channel configuration. Verify that any alternative maintains equivalent automotive qualification and thermal resistance characteristics.
FAQ
Is the AUIRF7303QTR suitable for high-temperature automotive environments?
Yes, it is designed for automotive applications with a maximum junction temperature of 175°C.
What is the maximum repetitive avalanche energy allowed?
The device allows repetitive avalanche operation up to Tjmax, with tested single pulse avalanche energy reaching 1160 mJ under specific conditions.
Does the device support logic-level gate drive?
Yes, it features logic level gate drive, allowing direct interfacing with standard logic outputs.
