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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 4.3A 8SOIC
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4.3A
- Rds On (Max) @ Id, Vgs：90mOhm @ 2.2A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：610pF @ 15V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The AUIRF7304Q is an automotive-grade dual P-channel HEXFET power MOSFET in an SO-8 package. It features a drain-source breakdown voltage of -20V and a maximum on-resistance of 0.090 ohms at VGS = -4.5V. The device supports a continuous drain current of -4.3A at 25°C and handles pulsed currents up to -17A. Operating junction temperature ranges from -55°C to +150°C, with thermal resistance (junction-to-ambient) maxing at 62.5°C/W. Total gate charge is typically 22nC.
Feature Summary
- Dual P-channel configuration for efficient power switching
- Automotive qualification per AEC-Q101 standards
- Advanced planar technology for low on-resistance
- Logic level gate drive compatibility
Applications
- Automotive cellular systems
- Low-side load switching
- Power management circuits requiring ruggedized design
Procurement Notes
Verify the specific ordering suffix matches the required packaging format. Confirm that the component meets the necessary AEC-Q101 qualification levels for your target application. Ensure that the SO-8 tape and reel specifications align with your assembly equipment requirements before finalizing procurement orders.
Selection Notes
Select this component when dual independent P-channel switching is required in a compact SO-8 footprint. Consider its -20V rating and 0.090 ohm RDS(on) for low-voltage automotive applications. Evaluate thermal performance based on the 62.5°C/W junction-to-ambient resistance under board-mounted conditions.
Part Context
This part belongs to Infineon's HEXFET family, utilizing advanced planar technology to achieve high efficiency. It is specifically engineered for automotive environments, offering robustness against harsh electrical conditions. The dual-cell design allows for space-saving implementations in complex power distribution networks.
Replacement Considerations
Check for direct cross-references within Infineon's portfolio. Verify pinout compatibility and electrical parameter equivalence if substituting with other dual P-channel MOSFETs. Ensure any alternative maintains the same automotive qualification status.
