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Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 8SOIC
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：58mOhm @ 4.9A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：34nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：710pF @ 25V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The AUIRF7316Q is an automotive-grade dual P-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a SOIC-8 surface-mount package and operates with a drain-source voltage of 30 V. The device supports a continuous drain current of 4.9 A at 25°C, with a maximum on-resistance of 42 mΩ. Gate-source voltage limits are ±20 V, and total power dissipation reaches 2 W. Operating temperatures range from -55°C to +150°C junction temperature.
Feature Summary
- Automotive qualification compliant with AEC-Q101 standards for high reliability in vehicle environments.
- Integrated dual P-channel architecture providing two independent switches within a compact footprint.
- HEXFET technology optimized for low conduction losses and efficient switching performance.
Applications
- Automotive load switching applications requiring robust P-channel control.
- High-side switching circuits in vehicle electronic control units.
- Power management modules in automotive infotainment and lighting systems.
Procurement Notes
Verify the specific ordering suffix and tape-and-reel quantity against official Infineon documentation before procurement. Confirm that the component meets the required AEC-Q101 grade specifications for your target automotive application. Check for any recent lifecycle status changes or alternative recommendations directly from the manufacturer's official channels to ensure supply continuity.
Selection Notes
Select this component when designing automotive circuits necessitating dual P-channel isolation in a small SOIC-8 package. Ensure the thermal design accommodates the 2 W power dissipation limit under expected operating conditions. Verify that the 30 V rating aligns with the system's maximum voltage transients and that the gate drive levels remain within the ±20 V specification.
Part Context
This part belongs to Infineon's automotive-grade OptiMOS™ and HEXFET™ portfolio, designed specifically for demanding vehicular electronics. It complements other dual-channel MOSFETs in the IRF73xx series, offering enhanced reliability and performance metrics suitable for strict automotive quality standards and long-term operational durability.
Replacement Considerations
Consult official cross-reference tools for verified substitutes. Ensure any replacement maintains identical pinout, voltage ratings, and automotive qualification status to guarantee functional compatibility without redesigning the host circuit board.
