AUIRF7319QTR

Overview

The AUIRF7319QTR is an automotive-grade dual HEXFET Power MOSFET in a surface-mount SO-8 package, containing one N-channel and one P-channel device. It features advanced planar technology for low on-resistance and logic-level gate drive capability. The N-channel unit supports a drain-source voltage of 30V with a maximum continuous drain current of 6.5A at 25°C and a typical RDS(on) of 0.023Ω. The P-channel unit provides -30V breakdown and -4.9A current capability with a typical RDS(on) of 0.042Ω. Both channels are fully avalanche rated, operating up to a junction temperature of 150°C.

Feature Summary

• Automotive qualified according to AEC-Q101 standards
• Dual configuration integrating separate N-channel and P-channel MOSFETs
• Advanced planar technology achieving ultra-low on-resistance per silicon area
• Fully avalanche rated with improved repetitive avalanche energy handling

Applications

• Automotive power management circuits
• Motor control applications requiring complementary switching
• Low-side and high-side driver stages
• General purpose power switching in automotive environments

Procurement Notes

Verify the specific suffix 'TR' indicates the tape and reel packaging format containing 4000 units per standard order quantity. Confirm that the component meets the required AEC-Q101 qualification level for your specific automotive application environment. Ensure thermal design accounts for the junction-to-ambient resistance characteristics provided in the datasheet under board-mounted conditions.

Selection Notes

Select this component when a compact dual solution combining both N-channel and P-channel logic-level MOSFETs is required for space-constrained designs. The SO-8 package offers enhanced thermal performance compared to smaller packages while maintaining a small footprint. Consider the specific RDS(on) values at your intended gate drive voltage (4.5V or 10V) to ensure adequate efficiency for your load requirements.

Part Context

This part belongs to Infineon's HEXFET family of power MOSFETs, specifically designed for robust performance in demanding environments. The base part number AUIRF7319Q denotes the automotive grade variant, while the 'TR' suffix specifies the reel packaging form factor. These devices utilize Infineon's proprietary processing techniques to optimize the balance between conduction losses and switching speed.

Replacement Considerations

Consult official cross-reference documentation for verified substitutes. Generic replacements may not match the specific AEC-Q101 automotive qualification or the exact pinout and thermal characteristics of the SO-8 dual package.