AUIRF7343Q

AUIRF7343Q

  • Description:MOSFET N/P-CH 55V 4.7A 8SOIC
  • Series:HEXFET®

SKU:7f74f7cdcf5a Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET N/P-CH 55V 4.7A 8SOIC
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):55V
  • Current - Continuous Drain (Id) @ 25°C:4.7A, 3.4A
  • Rds On (Max) @ Id, Vgs:50mOhm @ 4.7A, 10V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:740pF @ 25V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

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AUIRF7343Q

Overview

The AUIRF7343Q is an automotive-grade dual N- and P-channel HEXFET power MOSFET in a surface-mount SO-8 package. It utilizes advanced planar technology to achieve ultra-low on-resistance, with typical values of 0.043 ohms for the N-channel and 0.095 ohms for the P-channel at VGS=10V. The device supports continuous drain currents of 4.7A (N-channel) and -3.4A (P-channel), operates up to a junction temperature of 150°C, and features logic-level gate drive capability.

Feature Summary

  • Automotive qualified per AEC-Q101 standards
  • Dual N-Channel and P-Channel configuration in a single package
  • Ultra-low on-resistance utilizing advanced planar technology
  • Logic level gate drive for efficient control

Applications

  • Automotive power management systems
  • Low-side switching applications
  • High-efficiency motor control circuits

Procurement Notes

Verify component authenticity through authorized Infineon distributors or official channels. Confirm that the specific orderable part number matches the required tape and reel quantity. Ensure compliance with automotive qualification standards and check for any specific handling requirements related to moisture sensitivity level 1.

Selection Notes

Select this component when automotive reliability and high efficiency are required in space-constrained designs. The dual configuration reduces board space compared to discrete solutions. Verify that the thermal resistance and power dissipation ratings align with the specific application's ambient temperature and cooling conditions.

Part Context

This component belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It is specifically engineered for automotive environments, offering enhanced repetitive avalanche rating and fast switching speeds. The SO-8 package provides improved thermal characteristics suitable for various power applications.

Replacement Considerations

Direct replacement requires verifying pinout compatibility and electrical parameters such as voltage ratings and on-resistance. Check if alternative dual MOSFET packages meet the same automotive qualification standards and thermal performance requirements.

AUIRF7343QAUIRF7343Q

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