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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 5.8A 8SOIC
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：5.8A, 4.3A
- Rds On (Max) @ Id, Vgs：45mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：520pF @ 25V
- Power - Max：2.5W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The AUIRF7379QTR is an automotive-grade dual HEXFET Power MOSFET in a surface-mount SO-8 package, integrating one N-channel and one P-channel device. It features a drain-source voltage of 30V for the N-channel and -30V for the P-channel. The continuous drain current is 5.8A at 25°C for the N-channel and -4.3A for the P-channel. Maximum on-resistance is 0.045Ω (N-channel) and 0.090Ω (P-channel). Gate threshold voltage ranges from 1.0V to 3.0V. Total gate charge is 25nC. Operating junction temperature spans -55°C to +150°C with a maximum power dissipation of 2.5W.
Feature Summary
- Automotive qualified per AEC-Q101 standards for high reliability
- Advanced planar technology achieves extremely low on-resistance
- Logic level gate drive capability for efficient control
- Dual N and P channel configuration in a compact SO-8 package
Applications
- Automotive power management systems
- Motor control applications
- General purpose switching circuits
Procurement Notes
Verify component authenticity through authorized Infineon channels or certified distributors. Confirm the specific suffix 'QTR' indicates tape and reel packaging containing 4000 units. Ensure the procurement documentation matches the exact part number AUIRF7379QTR to avoid confusion with non-automotive variants like IRF7379TR.
Selection Notes
Select this component when designing automotive circuits requiring a complementary N/P MOSFET pair in a single footprint. The logic-level gate drive simplifies driver selection. Verify that the thermal requirements of the application fit within the 2.5W power dissipation limit and the 50°C/W junction-to-ambient thermal resistance specifications under steady-state conditions.
Part Context
This device belongs to the Infineon HEXFET family, utilizing advanced processing techniques to minimize silicon area resistance. The automotive qualification ensures robustness against harsh environmental conditions typical in vehicle electronics. The dual configuration allows for cost-effective implementation of half-bridge or synchronous rectification topologies.
Replacement Considerations
IRF7379TR is the non-automotive equivalent. Note that the Q suffix denotes automotive qualification; replacing it with non-Q parts requires re-validation of reliability standards.
FAQ
What is the maximum pulsed drain current?
The maximum pulsed drain current is 46A for the N-channel and -34A for the P-channel.
Is the device lead-free?
Yes, the AUIRF7379QTR is lead-free and RoHS compliant.
What is the internal source inductance?
The internal source inductance is typically 6.0nH between the lead and the center of the die contact.
