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The AUIRF9952Q is an automotive-grade dual N-channel and P-channel HEXFET power MOSFET array in an SO-8 package. It features a maximum drain-source voltage of ±30V, continuous drain currents of 3.5A (N-Ch) and -2.3A (P-Ch), and logic-level gate drive capabilities. The device offers low on-resistance, fast switching speeds, and full avalanche rating up to Tjmax.
Verify the specific suffix against official documentation to confirm package type and reel quantity. Confirm current availability status as automotive components may undergo lifecycle changes. Ensure compliance with RoHS requirements and moisture sensitivity levels before integration into production assemblies.
Select this component when designing automotive systems requiring a compact dual MOSFET solution. Consider its logic-level gate drive for direct microcontroller interfacing. Evaluate thermal performance based on the specified junction-to-ambient resistance under board-mounted conditions.
This part belongs to Infineon's HEXFET family, utilizing advanced planar technology to achieve low on-resistance per silicon area. It combines ruggedized device design with fast switching speeds, providing efficient and reliable performance for demanding automotive environments.
Check for compatible HEXFET arrays with similar voltage and current ratings. Verify pinout compatibility and thermal characteristics. Consult official substitution lists for confirmed equivalents.