AUIRF9952Q

AUIRF9952Q

  • Description:MOSFET N/P-CH 30V 3.5A/2.3A 8SO
  • Series:HEXFET®

SKU:f28b4c8725f3 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET N/P-CH 30V 3.5A/2.3A 8SO
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:3.5A, 2.3A
  • Rds On (Max) @ Id, Vgs:100mOhm @ 2.2A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:190pF @ 15V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SO
  • Grade:-
  • Qualification:-

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AUIRF9952Q

Overview

The AUIRF9952Q is an automotive-grade dual N-channel and P-channel HEXFET power MOSFET array in an SO-8 package. It features a maximum drain-source voltage of ±30V, continuous drain currents of 3.5A (N-Ch) and -2.3A (P-Ch), and logic-level gate drive capabilities. The device offers low on-resistance, fast switching speeds, and full avalanche rating up to Tjmax.

Feature Summary

  • Automotive qualified per AEC-Q101 standards
  • Advanced planar technology for low on-resistance
  • Logic level gate drive operation
  • Full avalanche rated with repetitive avalanche allowed

Applications

  • Automotive applications
  • Cellular design implementations
  • General purpose switching circuits

Procurement Notes

Verify the specific suffix against official documentation to confirm package type and reel quantity. Confirm current availability status as automotive components may undergo lifecycle changes. Ensure compliance with RoHS requirements and moisture sensitivity levels before integration into production assemblies.

Selection Notes

Select this component when designing automotive systems requiring a compact dual MOSFET solution. Consider its logic-level gate drive for direct microcontroller interfacing. Evaluate thermal performance based on the specified junction-to-ambient resistance under board-mounted conditions.

Part Context

This part belongs to Infineon's HEXFET family, utilizing advanced planar technology to achieve low on-resistance per silicon area. It combines ruggedized device design with fast switching speeds, providing efficient and reliable performance for demanding automotive environments.

Replacement Considerations

Check for compatible HEXFET arrays with similar voltage and current ratings. Verify pinout compatibility and thermal characteristics. Consult official substitution lists for confirmed equivalents.

AUIRF9952QAUIRF9952Q

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