AUIRFN8458TR

$2.07

Description：MOSFET 2N-CH 40V 43A PQFN
Series：HEXFET®

SKU:f0f0a44cc4f9 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 40V 43A PQFN
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：43A (Tc)
Rds On (Max) @ Id, Vgs：10mOhm @ 26A, 10V
Vgs(th) (Max) @ Id：3.9V @ 25µA
Gate Charge (Qg) (Max) @ Vgs：33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1060pF @ 25V
Power - Max：34W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Supplier Device Package：PQFN (5x6)
Grade：-
Qualification：-

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AUIRFN8458TR

Overview

The AUIRFN8458TR is an automotive-grade dual N-channel HEXFET power MOSFET in a Dual PQFN 5mm x 6mm package. It features a maximum drain-source voltage of 40V and a typical on-resistance of 8.0mΩ (max 10mΩ). The device supports a continuous drain current of 43A at 25°C case temperature and operates up to a junction temperature of 175°C. Key dynamic parameters include a total gate charge of 22nC and a pulsed drain current of 180A.

Feature Summary

Dual N-Channel configuration for space-efficient designs
Automotive qualification compliant with AEC-Q101 standards
Advanced process technology enabling ultra-low on-resistance
Fast switching characteristics with repetitive avalanche capability

Applications

12V Automotive Systems
Low Power Brushed Motor Control
Braking Systems

Procurement Notes

Verify the specific ordering suffix TR against the manufacturer's official documentation to confirm tape and reel packaging specifications. Ensure the component meets all required automotive qualification standards before integration into safety-critical systems. Cross-reference datasheet revisions to confirm parameter consistency.

Selection Notes

Select this component for applications requiring low conduction losses and high thermal stability in compact form factors. Evaluate the thermal resistance and safe operating area curves to ensure adequate heat dissipation under expected load conditions. Confirm that the gate drive requirements align with the specified threshold voltage and gate charge characteristics.

Part Context

This part belongs to Infineon Technologies' automotive MOSFET portfolio, utilizing Trench technology. It is designed specifically for robust performance in demanding automotive environments, offering improved reliability compared to standard industrial components through rigorous qualification processes.

Replacement Considerations

Consult official replacement guides for direct substitutes. Verify pinout compatibility and electrical parameters such as RDS(on) and VDS when considering alternative packages or manufacturers.