AUIRFN8459TR

AUIRFN8459TR

$2.07
  • Description:MOSFET 2N-CH 40V 50A PQFN
  • Series:HEXFET®

SKU:d6c6b1ba937a Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 40V 50A PQFN
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):40V
  • Current - Continuous Drain (Id) @ 25°C:50A
  • Rds On (Max) @ Id, Vgs:5.9mOhm @ 40A, 10V
  • Vgs(th) (Max) @ Id:3.9V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs:60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:2250pF @ 25V
  • Power - Max:50W
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:PQFN (5x6)
  • Grade:-
  • Qualification:-

Download product information

AUIRFN8459TR

Overview

The AUIRFN8459TR is an automotive-grade dual N-channel HEXFET power MOSFET in a Dual PQFN 5mm x 6mm package. It features a 40V drain-source breakdown voltage and a maximum on-resistance of 5.9mΩ at VGS=10V. The device supports continuous drain currents up to 70A (silicon limited) or 50A (package limited). Key electrical parameters include a gate threshold voltage range of 2.2V to 3.9V, total gate charge of 40nC typ., and a junction temperature operating range from -55°C to +175°C.

Feature Summary

  • Dual N-Channel configuration for compact system design
  • Advanced process technology achieving ultra-low on-resistance
  • Automotive qualification compliant with AEC-Q101 standards
  • Capable of repetitive avalanche operation up to maximum junction temperature

Applications

  • 12V Automotive Systems
  • Brushed DC Motor Control
  • Braking Systems
  • Transmission Control Modules

Procurement Notes

Verify the component matches the specific Dual PQFN 5x6mm package dimensions and pinout requirements for your PCB footprint. Confirm that the supplier provides documentation proving AEC-Q101 automotive qualification status. Ensure the ordering suffix corresponds to the tape and reel packaging format required by your assembly line equipment. Check for any recent product change notifications regarding manufacturing site or material composition.

Selection Notes

Select this component when designing circuits requiring low conduction losses in a small form factor for 12V automotive environments. Evaluate the thermal resistance characteristics against your board's copper area and cooling capabilities. Consider the fast switching speed and gate charge values for high-frequency PWM applications. Verify that the 40V rating provides sufficient headroom for your system's transient voltage spikes.

Part Context

This part belongs to the AUIRFN series of automotive power MOSFETs manufactured by Infineon Technologies (formerly International Rectifier). It utilizes COOLiRFET technology to minimize silicon area while maintaining high current handling. The 'AU' prefix indicates adherence to automotive industry requirements for product discontinuance and process change notifications.

Replacement Considerations

Direct substitutes within the same family include the AUIRFN8458, which offers higher on-resistance but similar packaging. Cross-referencing should verify identical pinouts and thermal characteristics. Any replacement must maintain AEC-Q101 compliance if used in qualified automotive systems.

FAQ

Is the AUIRFN8459TR allowed to operate in repetitive avalanche mode?

Yes, the datasheet explicitly states that repetitive avalanche is allowed up to the maximum junction temperature (Tjmax).

What is the difference between the silicon-limited and package-limited drain current?

The silicon-limited current is 70A, representing the theoretical limit of the die. The package-limited current is 50A, constrained by the bond wires and lead frame heating.

Does this component meet automotive quality standards?

Yes, it is qualified according to the AEC-Q101 standard for automotive grade components.

AUIRFN8459TRAUIRFN8459TR
$2.07
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