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AUIRFR3504 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists International Rectifier. Its product description is AUTOMOTIVE HEXFET N CHANNEL. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for AUIRFR3504
- Description：AUTOMOTIVE HEXFET N CHANNEL
- Series：HEXFET®
- Mfr：International Rectifier
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：9.2mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：71 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2150 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：140W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252AA (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for AUIRFR3504
Single FETs, MOSFETs Overview
The AUIRFR3504 is an N-channel enhancement mode MOSFET from the HEXFET family, manufactured by Infineon Technologies. It features a maximum drain-source voltage of 40 V and a continuous drain current of 87 A in a DPAK (TO-252) surface-mount package. The device exhibits a maximum on-resistance of 9.2 mΩ and operates with a gate threshold voltage between 2 V and 4 V. It supports a maximum power dissipation of 140 W and functions within a temperature range of -55 °C to +175 °C. Typical gate charge is 48 nC at 10 V.
Single FETs, MOSFETs Feature Summary
- Automotive-grade reliability designed for harsh environments
- High thermal stability supporting operation up to 175 °C junction temperature
- Low on-resistance for efficient power switching
- Integrated body diode for synchronous rectification
Single FETs, MOSFETs Applications
- Automotive power distribution systems
- DC/DC converter circuits
- Motor control applications
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix against official datasheets to confirm pinout and electrical tolerances. Ensure component authenticity through authorized channels. Confirm RoHS compliance status for regulatory requirements. Validate package dimensions against PCB footprint specifications prior to integration.
Single FETs, MOSFETs Selection Notes
Select this component for high-current automotive applications requiring robust thermal performance. The low on-resistance minimizes conduction losses. Verify that the 40V rating exceeds peak circuit voltages. Ensure the drive voltage accommodates the specified threshold range for reliable switching.
Single FETs, MOSFETs Part Context
This part belongs to the HEXFET series of power MOSFETs. It utilizes silicon technology for high-efficiency switching. The DPAK package provides a balance of current handling and thermal management. It is designed for surface-mount assembly in compact electronic designs.
Single FETs, MOSFETs Replacement Considerations
Consult official replacement lists for verified equivalents. Cross-reference absolute maximum ratings and thermal characteristics carefully. Ensure pin compatibility and electrical parameters match application requirements before substitution.
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