AUIRG4PH50S

AUIRG4PH50S

$10.04
  • Description:IGBT 1200V 141A TO-247AC
  • Series:-

SKU:de45207a61cd Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 1200V 141A TO-247AC
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):141 A
  • Current - Collector Pulsed (Icm):99 A
  • Vce(on) (Max) @ Vge, Ic:1.7V @ 15V, 33A
  • Power - Max:543 W
  • Switching Energy:16mJ (off)
  • Input Type:Standard
  • Gate Charge:227 nC
  • Td (on/off) @ 25°C:-/616ns
  • Test Condition:600V, 33A, 5Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247AC
  • Grade:Automotive
  • Qualification:AEC-Q101

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AUIRG4PH50S

Overview

The AUIRG4PH50S is an automotive-grade Generation 4 IGBT in a TO-247AC package. It features a collector-to-emitter voltage of 1200 V and continuous collector currents of 141 A at 25°C and 81 A at 100°C case temperature. The typical saturation voltage is 1.47 V at 33 A. Designed for low operating frequencies below 1 kHz, it offers tight parameter distribution and high efficiency.

Feature Summary

  • Automotive qualified to AEC-Q101 standards
  • Optimized for minimum saturation voltage and low operating frequencies
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency

Applications

  • PTC heaters
  • DC-AC inverters
  • DC-DC converters

Procurement Notes

Verify the component against official Infineon or International Rectifier datasheets to confirm the exact electrical parameters and physical dimensions. Ensure the TO-247AC package matches your thermal management requirements. Confirm that the device meets all necessary automotive qualification standards required by your specific application environment.

Selection Notes

Select this component when designing circuits requiring robust automotive-grade reliability and optimized performance at low switching frequencies. Consider the thermal resistance characteristics and the maximum power dissipation limits under your expected case temperatures to ensure safe operation within the specified junction temperature range.

Part Context

This discrete IGBT belongs to the Generation 4 product line, engineered specifically for applications demanding high efficiency and precise parameter control. The 'AU' prefix indicates compliance with automotive industry requirements regarding product discontinuance and process change notifications, ensuring long-term availability for critical systems.

Replacement Considerations

IRG4PH50KDPBF

FAQ

What is the maximum collector-to-emitter voltage rating?

The maximum collector-to-emitter voltage (VCES) is rated at 1200 V.

Is this component suitable for high-frequency switching applications?

No, the AUIRG4PH50S is specifically optimized for low operating frequencies below 1 kHz.

What is the typical gate threshold voltage?

The typical gate threshold voltage (VGE(th)) is approximately 3.0 V to 6.0 V under standard test conditions.

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