AUIRGP35B60PD

Overview

The AUIRGP35B60PD is an automotive-grade N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a 600 V collector-emitter voltage rating and supports a continuous collector current of 60 A at 25°C. The device utilizes WARP2 technology, enabling operation up to 150 kHz with a low on-state saturation voltage of 2.15 V. Packaged in a TO-247AD through-hole housing, it meets AEC-Q100 qualification standards for automotive reliability.

Feature Summary

• Automotive qualified under AEC-Q100 standards for high-reliability applications
• WARP2 technology enables high-frequency switching performance up to 150 kHz
• Low on-state saturation voltage reduces conduction losses
• Single configuration with integrated fast recovery anti-parallel diode

Applications

• On-board chargers for electric vehicles
• DC-DC converters in automotive powertrains
• Motor control inverters
• General automotive power conversion systems

Procurement Notes

Verify the specific suffix designation when sourcing, as variants such as AUIRGP35B60PD-E exist within the product family. Confirm package type accuracy, noting that some listings reference TO-247AC while official specifications indicate TO-247AD. Ensure the component matches the required automotive grade and temperature range specifications for the target application environment.

Selection Notes

Select this IGBT for designs requiring robust automotive certification and high-frequency capability. The 60 A current rating suits moderate-power traction and auxiliary systems. Evaluate thermal management requirements based on the 308 W power dissipation limit. Consider the gate drive voltage compatibility, which operates within standard ±20 V limits for reliable switching control.

Part Context

This component belongs to Infineon's IRGP35B series of automotive IGBTs. It represents a generation of devices optimized for electric vehicle power electronics, balancing efficiency with ruggedness. The part integrates a fast recovery diode, simplifying circuit design for half-bridge configurations commonly found in modern EV architectures.

Replacement Considerations

Direct substitutes include the AUIRGP35B60PD-E variant. Cross-reference with other Infineon automotive IGBTs offering similar 600 V ratings and TO-247 packaging, ensuring electrical parameters like Vce(sat) and switching times align with the original design constraints.