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Product Detailed Parameters
- Description：IGBT NPT 600V 75A TO-247AC
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：75 A
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：2.85V @ 15V, 50A
- Power - Max：390 W
- Switching Energy：255µJ (on), 375µJ (off)
- Input Type：Standard
- Gate Charge：205 nC
- Td (on/off) @ 25°C：30ns/130ns
- Test Condition：390V, 33A, 3.3Ohm, 15V
- Reverse Recovery Time (trr)：42 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AC
- Grade：-
- Qualification：-
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Overview
The AUIRGP50B60PD1 is an automotive-grade n-channel IGBT from the WARP2 series, packaged in a TO-247AC lead-free housing. It features NPT technology with a positive temperature coefficient for VCE(on) and integrates a HEXFRED ultrafast soft-recovery co-pack diode. The device supports a collector-emitter voltage of 600V and a continuous collector current of 75A at 25°C case temperature. Internal gate resistance is typically 1.7Ω, and it operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- NPT technology providing a positive temperature coefficient for lower conduction losses and parallel operation capability
- HEXFRED ultrafast soft-recovery co-pack diode minimizing tail current and parasitic capacitances
- Automotive qualification ensuring high reliability and robust thermal performance
Applications
- Automotive HEV and EV systems
- PFC circuits
- ZVS SMPS circuits
Procurement Notes
Verify that the specific orderable part number matches the required package variant (TO-247AC or TO-247AD). Confirm compliance with RoHS standards and automotive qualification requirements before finalizing procurement. Ensure the ordering suffix aligns with the intended application environment and mounting constraints.
Selection Notes
Select this component for applications requiring high switching frequencies up to 150kHz and efficient power handling. Consider the equivalent MOSFET parameters for direct comparison if evaluating alternative technologies. Evaluate thermal management needs based on the specified junction-to-case thermal resistance values for optimal system design.
Part Context
This IGBT belongs to Infineon's WARP2 series, designed specifically for high-efficiency power conversion. It is engineered to deliver superior performance in demanding environments through optimized carrier lifetime control and advanced packaging techniques suitable for automotive and industrial sectors.
Replacement Considerations
The datasheet lists AUIRGP50B60PD1-E as the corresponding variant utilizing the TO-247AD package instead of the standard TO-247AC configuration.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is +150°C.
Does the device support parallel operation?
Yes, the positive temperature coefficient of the VCE(on) facilitates parallel operation for higher current applications.
What type of diode is integrated with the IGBT?
It integrates a HEXFRED ultrafast soft-recovery co-pack diode.
