AUIRGP50B60PD1E

AUIRGP50B60PD1E

  • Description:IGBT NPT 600V 75A TO-247AD
  • Series:-

SKU:72771171d971 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT NPT 600V 75A TO-247AD
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tube
  • IGBT Type:NPT
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):75 A
  • Current - Collector Pulsed (Icm):150 A
  • Vce(on) (Max) @ Vge, Ic:2.85V @ 15V, 50A
  • Power - Max:390 W
  • Switching Energy:255µJ (on), 375µJ (off)
  • Input Type:Standard
  • Gate Charge:205 nC
  • Td (on/off) @ 25°C:30ns/130ns
  • Test Condition:390V, 33A, 3.3Ohm, 15V
  • Reverse Recovery Time (trr):42 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247AD
  • Grade:-
  • Qualification:-

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AUIRGP50B60PD1E

Overview

The AUIRGP50B60PD1E is an automotive-grade N-channel IGBT with a co-packaged HEXFRED ultrafast soft-recovery diode. It utilizes NPT technology for a positive temperature coefficient and features lower parasitic capacitances. The device operates at a collector-emitter voltage of 600V, with a continuous collector current of 75A at 25°C case temperature. It supports switching frequencies up to 150kHz and includes minimal tail current characteristics.

Feature Summary

  • Automotive grade qualification
  • NPT technology with positive temperature coefficient
  • HEXFRED ultrafast soft-recovery diode
  • Minimal tail current

Applications

  • Automotive HEV and EV
  • PFC circuits
  • ZVS SMPS Circuits

Procurement Notes

Verify the specific suffix 'E' corresponds to the TO-247AD package variant rather than the standard TO-247AC. Confirm that the component meets the required automotive qualification standards specified by Infineon Technologies before finalizing procurement specifications.

Selection Notes

Select this component for high-current applications requiring parallel operation due to its parameter distribution tightness. Consider the equivalent MOSFET parameters for circuit design comparisons. Ensure thermal management accommodates the maximum power dissipation ratings under varying case temperatures.

Part Context

This part belongs to the WARP2 series of IGBTs from Infineon Technologies. It is designed to offer improved performance over previous generations through reduced switching losses and enhanced thermal stability suitable for demanding automotive environments.

Replacement Considerations

The base part number AUIRGP50B60PD1 serves as a direct functional replacement but utilizes a different TO-247AC package. Verify mechanical fitment when substituting between the AC and AD package types.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is +150°C.

Does the device include an integrated freewheeling diode?

Yes, it features a co-packaged HEXFRED ultrafast soft-recovery diode.

What is the internal gate resistance value?

The typical internal gate resistance is 1.7 Ω measured at 1MHz with an open collector.

AUIRGP50B60PD1EAUIRGP50B60PD1E

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