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The B10G1819N10DLX is an RF LDMOS transistor manufactured by Ampleon. It operates within the frequency range of 1.805 GHz to 1.88 GHz, suitable for cellular base station applications. The device delivers a continuous wave output power of 10 W with a gain of 32 dB. Key electrical specifications include a drain-source breakdown voltage (Vds) of 65 V and gate-source voltage limits of -6 V to +11 V. It is housed in an LGA-20 package designed for surface mount technology and supports a maximum operating temperature of +125 C.
Verify the specific suffix 'X' against official Ampleon documentation to confirm reel packaging or tape-and-reel specifications. Ensure compatibility with standard SMD/SMT assembly processes. Confirm RoHS compliance status through the manufacturer's datasheet before integration into production lines.
Select this component for applications requiring 10 W output at GSM/DCS frequencies. Compare gain and linearity metrics against alternative LDMOS devices in the same package. Verify that the 65 V breakdown voltage aligns with the system's supply requirements and biasing conditions.
This part belongs to Ampleon’s portfolio of RF power transistors designed for telecommunications. It complements similar models like the B10G2324N10DLZ, which targets higher frequency bands. The device represents a standard solution for mid-power RF amplification in modern cellular networks.
Direct substitutes may include other Ampleon LDMOS devices with matching 10 W output and LGA-20 packaging. Verify pinout compatibility and thermal resistance values when considering cross-brand alternatives from manufacturers such as NXP Semiconductors.