B11G2327N71DX

B11G2327N71DX

$39.23
  • Description:RF MOSFET LDMOS 28V 36QFN
  • Series:-

SKU:173f3e8859d3 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V 36QFN
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:2.3GHz ~ 2.7GHz
  • Gain:30dB
  • Voltage - Test:28 V
  • Current Rating (Amps):1.4µA
  • Noise Figure:-
  • Current - Test:-
  • Power - Output:-
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:36-QFN Exposed Pad
  • Supplier Device Package:36-PQFN (12x7)
  • Configuration:-

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B11G2327N71DX

Overview

The B11G2327N71DX is an RF LDMOS transistor manufactured by Ampleon, designed for high-frequency power amplification. It operates within a frequency range of 2.3 GHz to 2.7 GHz and features a drain-source breakdown voltage (Vds) of 65 V. The device provides a typical gain of 33.5 dB and delivers an output power of 49.5 dBm at the 3 dB compression point. Gate-source voltage limits are specified between -500 mV and +13 V. The component is housed in a 36-pin PQFN package measuring 12x7 mm, suitable for surface mount installation, with a maximum operating temperature rating of +200°C.

Feature Summary

  • Integrated design combining carrier and peak devices with input splitters and output combiners
  • Optimized output impedance of 20 Ω and standard 50 Ω input impedance
  • Supports independent control of carrier and peak bias voltages

Applications

  • Macrocellular base station drivers
  • Test and debug equipment

Procurement Notes

Verify the exact suffix against official Ampleon documentation, as variations such as DYZ indicate specific reel or tape packaging configurations. Confirm moisture sensitivity levels and lead-free compliance status prior to integration into production assemblies to ensure supply chain reliability.

Selection Notes

Select this component for applications requiring high linearity and efficiency in the 2.3-2.7 GHz band. The integrated architecture reduces external passive component count. Ensure thermal management solutions support the +200°C junction temperature capability and that bias circuits accommodate the independent carrier/peak control requirements.

Part Context

This part belongs to the B11G series of RF power transistors from Ampleon. It utilizes LDMOS technology optimized for cellular infrastructure. Similar models in the family may differ in frequency ranges or output power capabilities but share the same integrated amplifier topology and package form factor.

Replacement Considerations

Direct substitutes require matching the 36-PQFN(12x7) footprint and 65V Vds rating. Verify if alternative parts support the same 20Ω output impedance and independent bias control scheme to maintain circuit performance without redesign.

B11G2327N71DXB11G2327N71DX
$39.23
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