B11G3338N81DYZ

Overview

The B11G3338N81D is a dual-section, three-stage fully integrated Doherty MMIC utilizing Ampleon's LDMOS technology. Designed for the 3300 MHz to 3800 MHz frequency range, it integrates input splitters, output combiners, pre-matches, and bias controls within each section. The device features a 25 Ω output impedance and 50 Ω source impedance. Typical performance at 3600 MHz with 28 V drain voltage includes 48.7 dBm output power at 1 dB gain compression, 33 dB power gain, and 22% drain efficiency under 1-carrier LTE conditions.

Feature Summary

• Fully integrated dual-section Doherty architecture combining carrier and peaking devices with input splitters and output combiners
• Integrated pre-match network providing 25 Ω output impedance and 50 Ω source impedance
• Independent control of carrier and peaking gate-source bias voltages
• Integrated ESD protection and bias gate switch functionality

Applications

• Macrocell base station driver
• Microcell base station driver
• 5G mMIMO systems
• W-CDMA/LTE infrastructure
• Active antenna arrays

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation before purchase. The 'YZ' suffix indicates a tape and reel packing description with a minimum orderable quantity of 300 pieces in dry pack format. Confirm that the package outline matches the PQFN-12x7-36-1 specification required for your PCB layout design.

Selection Notes

Select this component for applications requiring high linearity and wide instantaneous bandwidth in the 3.3 GHz to 3.8 GHz band. Ensure the design accommodates independent bias supplies for carrier and peaking sections. Verify thermal management capabilities, as the junction-to-case thermal resistance varies between 1.4 K/W and 1.7 K/W depending on output power levels.

Part Context

This part belongs to the GEN11 Macro driver series from Ampleon, designed for 6 GHz below macro base stations. It complements other multi-band drivers like the B11G3338N80D and supports the expansion of efficient, no-isolator Doherty solutions for next-generation wireless infrastructure.

Replacement Considerations

The B11G3338N80D is a related tri-push three-stage Doherty RF transistor in the same GEN11 Macro driver family covering similar frequency bands. Verify pin compatibility and electrical specifications when considering cross-references within the Ampleon portfolio.

FAQ

What is the maximum load mismatch the device can withstand?

The B11G3338N81D can withstand a load mismatch corresponding to VSWR = 10:1 through all phases under specified operating conditions.

How is the PA enable function controlled?

The PA enable trigger signal (PA_e) operates between 0 V and 5 V, where logic HIGH turns the IDq-bias ON and logic LOW turns it OFF.

What are the ESD sensitivity classifications?

The device is classified as C1 for Charged Device Model (CDM) and 1C for Human Body Model (HBM) according to JEDEC standards.