BA 892 E6127

Overview

The Infineon Technologies BA 892 E6127 is a silicon PIN diode designed for RF switching applications. It features a maximum reverse voltage of 35 V and a peak forward current of 100 mA. The device exhibits a maximum capacitance of 1.1 pF and a typical series resistance of 500 mOhms at 10 mA and 100 MHz. Operating temperatures range from -55°C to +150°C junction temperature. The component is housed in an SCD-80 surface-mount package, suitable for automated assembly processes.

Feature Summary

• Utilizes silicon technology for robust RF switching performance
• Optimized carrier lifetime of 0.12 microseconds for fast response
• Single configuration with low parasitic capacitance

Applications

• RF signal switching circuits
• Attenuator modules
• Phase shifters in communication systems

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status against current regulatory requirements. Check datasheet revisions for any updates to electrical characteristics or packaging specifications before integration into production designs.

Selection Notes

Evaluate the 35 V reverse voltage rating against circuit peak inverse voltages. Ensure the 100 mA forward current capability meets load requirements. Consider the SCD-80 package dimensions for PCB layout constraints. Verify thermal management needs given the 150°C maximum junction temperature limit.

Part Context

This part belongs to the BA 892 family of PIN diodes manufactured by Infineon Technologies. These components are engineered for high-frequency applications requiring precise control of RF signals. The specific suffix E6127 denotes the particular tape-and-reel packaging configuration used for this variant.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers should consult official replacement guides or contact the manufacturer directly for qualified alternatives.