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The BA682-GS08 is a silicon planar band switching diode manufactured by Vishay General Semiconductor - Diodes Division. It features a MiniMELF SOD-80 case with a black cathode band. Key electrical parameters include a maximum reverse voltage (VR) of 35 V and a continuous forward current (IF) of 100 mA. At IF = 100 mA, the forward voltage (VF) is typically 1000 mV. The device exhibits low dynamic forward resistance, specified as a maximum of 0.7 Ω at f = 200 MHz and IF = 3 mA. Reverse current is limited to 50 nA at VR = 20 V. Diode capacitance is 1.5 pF at f = 100 MHz and VR = 1 V. The junction temperature range extends up to 150 °C.
Verify the specific ordering suffix GS08 corresponds to the required tape and reel packaging configuration. Confirm that the component meets all applicable RoHS compliance definitions and material categorization standards prior to integration into production workflows.
Select the BA682 variant over the BA683 when lower dynamic forward resistance is critical for the application. Ensure the operating frequency aligns with the specified test conditions for capacitance and resistance parameters. Validate thermal management requirements against the junction-to-ambient thermal resistance specifications.
This component belongs to the BA682/BA683 series of band switching diodes designed for VHF tuner applications. It utilizes a MiniMELF SOD-80 package, providing a compact surface-mount solution. The product line includes variants differentiated primarily by their dynamic forward resistance values.
The BA683-GS08 serves as a functional alternative within the same series, distinguished by a higher dynamic forward resistance specification.