BA782-G3-08

BA782-G3-08

  • Description:RF DIODE PIN 35V SOD-123
  • Series:-

SKU:458f8ab0c589 Category: Brand:

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Product Detailed Parameters

  • Description:RF DIODE PIN 35V SOD-123
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR)
  • Diode Type:PIN - Single
  • Voltage - Peak Reverse (Max):35V
  • Current - Max:100 mA
  • Capacitance @ Vr, F:1.25pF @ 3V, 1MHz
  • Resistance @ If, F:700mOhm @ 3mA, 1GHz
  • Power Dissipation (Max):-
  • Operating Temperature:125°C (TJ)
  • Package / Case:SOD-123
  • Supplier Device Package:SOD-123
  • Grade:-
  • Qualification:-

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BA782-G3-08

Overview

The BA782-G3-08 is a silicon epitaxial planar band switching diode manufactured by Vishay Semiconductors. It operates within a reverse voltage of 35 V and supports a continuous forward current of 100 mA. The device features low dynamic forward resistance, measuring 0.7 Ω at 3 mA and 0.5 Ω at 10 mA across the 50 to 1000 MHz frequency range. Diode capacitance is maintained at 1.5 pF at 1 MHz with 1 V reverse bias. Packaged in an SOD-123 surface-mount case, it functions reliably between -55 °C and +125 °C.

Feature Summary

  • Designed for electric bandswitching applications in radio and television tuners
  • Maintains constant and minimal dynamic forward resistance over wide frequency ranges
  • Exhibits small reverse capacitance largely independent of reverse voltage

Applications

  • Radio tuner bandswitching circuits
  • Television tuner bandswitching circuits
  • High-frequency signal routing (50 to 1000 MHz)

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and material categorization details against official documentation. Ensure storage conditions remain within specified limits to preserve junction integrity prior to assembly.

Selection Notes

Select this component when low dynamic forward resistance and stable capacitance are required for high-frequency switching. Compare specifications against the BA783 variant if different resistance characteristics are needed. Validate thermal performance against maximum junction temperature limits during operation.

Part Context

This part belongs to the BA782-G series of band switching diodes from Vishay Semiconductors. It shares the same mechanical SOD-123 package and general electrical architecture as the BA783 model, differing primarily in specific dynamic forward resistance values. The suffix G3 indicates green commercial grade packaging.

Replacement Considerations

The BA783-G3-08 serves as a direct functional substitute within the same series. Both components utilize identical SOD-123 packages and share similar absolute maximum ratings. Designers should verify that the specific dynamic forward resistance differences align with circuit requirements.

BA782-G3-08BA782-G3-08

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