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The BA782-G3-08 is a silicon epitaxial planar band switching diode manufactured by Vishay Semiconductors. It operates within a reverse voltage of 35 V and supports a continuous forward current of 100 mA. The device features low dynamic forward resistance, measuring 0.7 Ω at 3 mA and 0.5 Ω at 10 mA across the 50 to 1000 MHz frequency range. Diode capacitance is maintained at 1.5 pF at 1 MHz with 1 V reverse bias. Packaged in an SOD-123 surface-mount case, it functions reliably between -55 °C and +125 °C.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and material categorization details against official documentation. Ensure storage conditions remain within specified limits to preserve junction integrity prior to assembly.
Select this component when low dynamic forward resistance and stable capacitance are required for high-frequency switching. Compare specifications against the BA783 variant if different resistance characteristics are needed. Validate thermal performance against maximum junction temperature limits during operation.
This part belongs to the BA782-G series of band switching diodes from Vishay Semiconductors. It shares the same mechanical SOD-123 package and general electrical architecture as the BA783 model, differing primarily in specific dynamic forward resistance values. The suffix G3 indicates green commercial grade packaging.
The BA783-G3-08 serves as a direct functional substitute within the same series. Both components utilize identical SOD-123 packages and share similar absolute maximum ratings. Designers should verify that the specific dynamic forward resistance differences align with circuit requirements.