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The BA783-HG3-18 is a silicon epitaxial planar band switching diode manufactured by Vishay Semiconductors in an SOD-123 surface-mount package. It is designed for electric bandswitching applications in radio and TV tuners operating within the 50 MHz to 1000 MHz frequency range. The device features a maximum reverse voltage of 35 V and a continuous forward current rating of 100 mA. Key electrical characteristics include a typical dynamic forward resistance of 1.2 Ω at 3 mA and 0.9 Ω at 10 mA across the specified frequency band, with a diode capacitance of 1.2 pF at 3 V reverse bias.
Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm that the ordering suffix matches the required packaging configuration, as tape and reel options vary by quantity per reel. Ensure compliance with RoHS Directive 2011/65/EU requirements for restricted substances in electronic assemblies prior to integration.
Select this component when low dynamic forward resistance and stable capacitance are critical for RF switching performance between 50 MHz and 1000 MHz. The HG3 suffix indicates AEC-Q101 qualification, making it suitable for automotive environments where commercial-grade alternatives lack necessary reliability certifications. Validate thermal limits against expected junction temperatures during operation.
This part belongs to the BA782-G and BA783-G series of band switching diodes from Vishay Semiconductors. While sharing similar mechanical dimensions and general functionality, the BA783 variant exhibits higher dynamic forward resistance compared to the BA782 model. Both models utilize the SOD-123 case and offer halogen-free options distinguished by their specific ordering suffixes.
BA782-HG3-18 serves as a functional alternative within the same series, offering identical packaging and qualification but with lower dynamic forward resistance values.