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Product Detailed Parameters
- Description：RF DIODE PIN 35V SOD-323
- Series：-
- Mfr：Vishay General Semiconductor - Diodes Division
- Package：Tape & Reel (TR)
- Diode Type：PIN - Single
- Voltage - Peak Reverse (Max)：35V
- Current - Max：100 mA
- Capacitance @ Vr, F：1.2pF @ 3V, 1MHz
- Resistance @ If, F：1.2Ohm @ 3mA, 1GHz
- Power Dissipation (Max)：-
- Operating Temperature：125°C (TJ)
- Package / Case：SC-76, SOD-323
- Supplier Device Package：SOD-323
- Grade：-
- Qualification：-
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Overview
The BA783S-E3-08 is a silicon epitaxial planar band switching diode manufactured by Vishay Semiconductors in an SOD-323 surface-mount package. It is designed for electric bandswitching applications within the frequency range of 50 to 1000 MHz, offering small dynamic forward resistance and low reverse capacitance. Key electrical parameters include a maximum reverse voltage of 35 V, a continuous forward current rating of 100 mA, and a junction temperature limit of 125 °C. The device exhibits a typical forward voltage of 1000 mV at 100 mA, a maximum reverse current of 50 nA at 20 V, and a diode capacitance of 1.2 pF at 1 MHz with 3 V reverse bias.
Feature Summary
- Qualified under AEC-Q101 automotive standards
- RoHS-compliant commercial grade construction
- Low dynamic forward resistance across wide frequency ranges
- Reverse capacitance largely independent of reverse voltage
Applications
- Electric bandswitching in radio tuners
- Electric bandswitching in TV tuners
- RF circuit switching between 50 and 1000 MHz
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and AEC-Q101 qualification against the latest datasheet revision. Ensure storage conditions remain within specified limits to maintain performance integrity prior to assembly.
Selection Notes
Select this component when low parasitic capacitance and stable dynamic resistance are required for RF bandswitching. Verify that the 35 V reverse voltage and 100 mA forward current ratings exceed the specific circuit requirements. Consider the SOD-323 footprint constraints during PCB layout design.
Part Context
This part belongs to the BA782S/BA783S series of silicon epitaxial planar diodes. Both variants share identical mechanical dimensions and thermal characteristics but differ in specific electrical parameters such as diode capacitance and dynamic forward resistance values.
Replacement Considerations
No officially confirmed substitute part numbers are documented in the provided source material.
FAQ
What is the operating temperature range for the BA783S-E3-08?
The operating temperature range is -55 °C to +125 °C.
How does the reverse capacitance behave in this diode?
The reverse capacitance is small and largely independent of the reverse voltage.
What is the series inductance value for this component?
The series inductance across the case is 2.5 nH.
