BA979S-GS08

RF Diode Overview

The BA979S-GS08 is a single RF PIN diode manufactured by Vishay Semiconductors in the QuadroMELF SOD-80 glass package. It operates within a wide frequency range of 10 MHz to 1 GHz and holds AEC-Q101 qualification. Key electrical parameters include a maximum reverse voltage of 30 V, a forward continuous current rating of 50 mA, and a typical diode capacitance of 0.5 pF at 100 MHz with zero bias. The device exhibits a differential forward resistance of 50 Ω at 100 MHz and a minimum reverse impedance of 9 kΩ. Thermal characteristics specify a junction temperature limit of 125 °C and a storage temperature range from -55 °C to +150 °C.

RF Diode Feature Summary

• AEC-Q101 qualified for automotive reliability standards
• Wide operational frequency range spanning 10 MHz to 1 GHz
• QuadroMELF SOD-80 glass case construction

RF Diode Applications

• Current controlled HF resistance in adjustable attenuators

RF Diode Procurement Notes

Verify the specific ordering code suffix against the manufacturer's documentation to confirm packaging options. The GS08 suffix indicates availability on 7-inch reels containing 2,500 pieces per tape, while the GS18 variant utilizes 13-inch reels with 10,000 pieces. Confirm that the component meets RoHS compliance requirements as defined by Directive 2011/65/EU before finalizing procurement specifications.

RF Diode Selection Notes

Select the BA979S variant specifically when a higher reverse impedance threshold exceeding 9 kΩ is required for circuit isolation. The BA979 model provides a lower impedance floor of 5 kΩ. Ensure the design accommodates the 50 mA forward current limit and the 0.5 pF capacitance value at high frequencies. Validate thermal management capabilities given the 500 K/W thermal resistance characteristic of the SOD-80 package.

RF Diode Part Context

This component belongs to the BA979 series of single RF PIN diodes produced by Vishay Semiconductors. The series includes variants differentiated primarily by their reverse impedance characteristics. The BA979S designation identifies the version engineered for applications demanding superior reverse blocking performance compared to the standard BA979 configuration.

RF Diode Replacement Considerations

Direct substitutes must match the SOD-80 footprint and AEC-Q101 qualification. Verify that alternative components maintain the 30 V reverse voltage rating and similar capacitance profiles below 1 pF to ensure signal integrity is preserved in high-frequency attenuation circuits.