BAP64-05W,135

RF Diode Overview

The BAP64-05W,135 is a silicon PIN diode featuring two planar diodes in a common cathode configuration within an SOT323 (SC-70) surface-mounted package. It supports a maximum reverse voltage of 100 V and a forward current of 100 mA with total power dissipation up to 240 mW. Key electrical characteristics include a typical forward voltage of 0.95 V at 50 mA, low series inductance of 1.2 nH, and variable diode capacitance ranging from 0.23 pF to 0.52 pF depending on bias conditions. The device is qualified under AEC-Q101 standards for automotive applications.

RF Diode Feature Summary

• High voltage and current controlled operation suitable for RF attenuators and switches
• Low diode capacitance and low series inductance for high-frequency performance
• AEC-Q101 qualification for automotive reliability

RF Diode Applications

• RF attenuators
• RF switches
• Automotive electronics

RF Diode Procurement Notes

Verify the specific ordering suffix

RF Diode Selection Notes

Select this component when designing circuits requiring low parasitic inductance and capacitance for frequencies up to 3 GHz. Ensure the design accommodates the 100 V reverse voltage limit and 240 mW power dissipation constraints. Verify thermal management requirements against the junction-to-solder point thermal resistance of 250 K/W.

RF Diode Part Context

This part belongs to NXP's portfolio of small signal general-purpose PIN diodes designed for surface-mount technology. The BAP64-05W variant specifically utilizes the compact SOT323 package to minimize footprint while maintaining high-performance RF switching capabilities.

RF Diode Replacement Considerations

Check for direct pin-compatible alternatives such as the BAP64-05 or BAP64-06 if package changes are permissible. Verify that any substitute meets the same AEC-Q101 automotive qualification and electrical limits.