RF Diode BAR 64-02V E6127 product image

BAR 64-02V E6127

$0.05
  • Description:RF DIODE PIN 150V 250MW SC79-2
  • Series:-

SKU:18480bad8a63 Category: Brand:

  
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BAR 64-02V E6127 is listed in the RF Diode range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is RF DIODE PIN 150V 250MW SC79-2. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BAR 64-02V E6127

  • Description:RF DIODE PIN 150V 250MW SC79-2
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Diode Type:PIN - Single
  • Voltage - Peak Reverse (Max):150V
  • Current - Max:100 mA
  • Capacitance @ Vr, F:0.35pF @ 20V, 1MHz
  • Resistance @ If, F:1.35Ohm @ 100mA, 100MHz
  • Power Dissipation (Max):250 mW
  • Operating Temperature:150°C (TJ)
  • Package / Case:SC-79, SOD-523
  • Supplier Device Package:PG-SC79-2
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for BAR 64-02V E6127

BAR 64-02V E6127

RF Diode Overview

The BAR64-02V is a silicon PIN diode designed for RF switching applications, manufactured by Infineon Technologies. It features a single topology configuration housed in the SC-79 surface-mount package. Key electrical parameters include a maximum reverse voltage of 150 V and a peak forward current rating of 100 mA. The device exhibits a typical junction capacitance of 0.56 pF at 0 V reverse bias and a forward resistance of 2.1 Ω. The reverse recovery time is specified at 1550 ns. These characteristics support its use in high-frequency signal routing within compact electronic designs.

RF Diode Feature Summary

  • Engineered as a silicon PIN diode optimized for radio frequency switching operations
  • Utilizes a single-diode topology to facilitate signal routing between transmission paths
  • Packaged in the SC-79 form factor to enable surface-mount integration

RF Diode Applications

  • Implementation of Single-Pole Single-Throw (SPST) RF switch structures
  • Construction of Single-Pole Double-Throw (SPDT) antenna switching circuits
  • Signal routing across different transmission paths in RF systems

RF Diode Procurement Notes

Verify component authenticity by cross-referencing the manufacturer's part number with official documentation such as the Product Qualification Report or FIT report available through authorized channels. Confirm that the physical marking on the SC-79 package aligns with the specific ordering code. Ensure compliance with material content declarations prior to integration into final assemblies.

RF Diode Selection Notes

Select this component when designing RF switches requiring a 150 V reverse voltage capability and low junction capacitance. The 100 mA forward current rating suits moderate power handling needs. Evaluate the 1550 ns reverse recovery time against system speed requirements. The SC-79 package dimensions must fit the target PCB footprint constraints for surface-mount assembly.

RF Diode Part Context

This component belongs to Infineon's portfolio of silicon PIN diodes intended for RF applications. It serves as a specialized switching element distinct from standard rectifier diodes. The product line includes variants with different carrier lifetimes and voltage ratings to address diverse frequency and power requirements in communication hardware.

RF Diode Replacement Considerations

Publicly confirmed substitute part numbers are not identified in the provided source data. Engineering teams should consult official replacement guides or contact the manufacturer directly to identify compatible alternatives with matching electrical specifications and package outlines.

BAR 64-02V E6127BAR 64-02V E6127
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