RF Diode BAR6406WH6327XTSA1 product image

BAR6406WH6327XTSA1

$0.20
  • Description:RF DIODE PIN 150V 250MW SOT323
  • Series:-

SKU:4168a516c6a1 Category: Brand:

  
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BAR6406WH6327XTSA1 is listed in the RF Diode range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is RF DIODE PIN 150V 250MW SOT323. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BAR6406WH6327XTSA1

  • Description:RF DIODE PIN 150V 250MW SOT323
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Type:PIN - 1 Pair Common Anode
  • Voltage - Peak Reverse (Max):150V
  • Current - Max:100 mA
  • Capacitance @ Vr, F:0.35pF @ 20V, 1MHz
  • Resistance @ If, F:1.35Ohm @ 100mA, 100MHz
  • Power Dissipation (Max):250 mW
  • Operating Temperature:150°C (TJ)
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:PG-SOT323
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for BAR6406WH6327XTSA1

BAR6406WH6327XTSA1

RF Diode Overview

The BAR6406WH6327XTSA1 is a surface mount RF PIN diode featuring a common anode pair configuration. It is designed for low distortion switches requiring high voltage hold-off, suitable for frequencies up to 3 GHz. The device incorporates a nominal 50 μm I-region width and a typical carrier lifetime of 1550 ns. Key electrical parameters include a maximum reverse voltage of 150 V, a maximum forward current of 100 mA, and a total power dissipation of 250 mW. Typical capacitance is 0.25 pF at 0 V reverse bias, with a typical forward resistance of 2.2 Ω at 10 mA forward current.

RF Diode Feature Summary

  • Low signal distortion characteristics enabled by optimized charge carrier lifetime
  • Very low capacitance values ensuring minimal signal attenuation in RF paths
  • Low forward resistance providing efficient switching performance
  • Industry standard SOT323-3 package for compact surface mount integration

RF Diode Applications

  • Optimized for low bias current RF switches
  • High-speed interface switches
  • RF attenuators
  • Wireless communication systems
  • High speed data networks

RF Diode Procurement Notes

Verify the component against the official Infineon datasheet IFX-pwy1535527432136 (v1.1). Confirm the marking code PSs on the SOT323-3 package matches the ordering code BAR6406WH6327XTSA1. Ensure handling precautions for ESD-sensitive devices are strictly followed during assembly and testing procedures.

RF Diode Selection Notes

Select this component for applications requiring low distortion and high isolation in RF circuits operating up to 3 GHz. The common anode pair topology allows for differential or balanced circuit configurations. Verify that the required forward current does not exceed 100 mA and the reverse voltage remains within the 150 V limit for reliable operation.

RF Diode Part Context

This part belongs to the BAR64-06W series of cost-optimized RF PIN diodes from Infineon Technologies. It utilizes silicon technology and is qualified for industrial applications according to JEDEC standards. The product is Pb-free, RoHS compliant, and halogen-free, supporting environmentally conscious manufacturing processes.

RF Diode Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Infineon technical support for alternative components if this specific ordering code is unavailable.

BAR6406WH6327XTSA1BAR6406WH6327XTSA1
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