Single Diodes BAS516,L3F product image

BAS516,L3F

$0.09
  • Description:DIODE STANDARD 100V 250MA ESC
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:54f376373501 Category: Brand:

  
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BAS516,L3F is listed in the Single Diodes range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is DIODE STANDARD 100V 250MA ESC. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for BAS516,L3F

  • Description:DIODE STANDARD 100V 250MA ESC
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io):250mA
  • Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):3 ns
  • Current - Reverse Leakage @ Vr:200 nA @ 80 V
  • Capacitance @ Vr, F:0.35pF @ 0V, 1MHz
  • Mounting Type:Surface Mount
  • Package / Case:SC-79, SOD-523
  • Supplier Device Package:ESC
  • Operating Temperature - Junction:150°C (Max)
  • Grade:-
  • Qualification:-

Single Diodes datasheet and documents for BAS516,L3F

BAS516,L3F

Single Diodes Overview

The BAS516,L3F is a small signal switching diode manufactured by Toshiba Semiconductor and Storage. It features a single configuration in an SOD-523-2 surface mount package. Key electrical parameters include a peak reverse voltage of 100 V, a forward current of 250 mA, and a maximum surge current of 1 A. The device exhibits a fast recovery time of 3 ns and a low junction capacitance of 350 fF. Forward voltage is specified at 1.25 V with a reverse leakage current of 200 nA. Power dissipation is rated at 150 mW, and the operating temperature range spans from -55°C to +150°C.

Single Diodes Feature Summary

  • High-speed switching capability with 3 ns recovery time for efficient signal processing
  • Low junction capacitance design minimizes signal distortion in high-frequency applications
  • Robust thermal performance supports operation up to 150°C junction temperature

Single Diodes Applications

  • High-speed signal switching circuits
  • RF detection and mixing applications
  • Clamping and protection circuits in communication devices

Single Diodes Procurement Notes

Verify the specific suffix L3F against official Toshiba documentation to confirm packaging details and compliance status. Ensure the sourcing channel provides valid traceability for semiconductor components. Cross-reference the manufacturer part number with authorized distributor listings to confirm authenticity and avoid counterfeit risks during acquisition.

Single Diodes Selection Notes

Select this component when a compact surface-mount switching diode with low capacitance is required. The SOD-523-2 package suits space-constrained designs. Consider the 100V rating and 250mA current capacity for general-purpose high-speed switching tasks where minimal parasitic effects are critical for circuit integrity.

Single Diodes Part Context

This component belongs to the BAS516 series of high-speed switching diodes produced by Toshiba Semiconductor and Storage. The series is designed for applications requiring rapid response times and low power consumption. The L3F suffix typically denotes specific tape-and-reel packaging configurations used in automated assembly processes.

Single Diodes Replacement Considerations

BAS516,H3F serves as a verified substitute within the same product family, offering identical electrical characteristics and functionality.

BAS516,L3FBAS516,L3F
$0.09
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