BAT15-098LRH

$0.21

Description：DIODE SCHOTTKY 4V 100MW TSLP-4-7
Series：-

SKU:da721f55a5d7 Category: RF Diodes Brand: Infineon Technologies

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Product introduction

BAT15-098LRH is listed in the RF Diode range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE SCHOTTKY 4V 100MW TSLP-4-7. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BAT15-098LRH

Description：DIODE SCHOTTKY 4V 100MW TSLP-4-7
Series：-
Mfr：Infineon Technologies
Package：Bulk
Diode Type：Schottky - 1 Pair Common Cathode
Voltage - Peak Reverse (Max)：4V
Current - Max：110 mA
Capacitance @ Vr, F：0.5pF @ 0V, 1MHz
Resistance @ If, F：-
Power Dissipation (Max)：100 mW
Operating Temperature：150°C (TJ)
Package / Case：4-XFDFN
Supplier Device Package：PG-TSLP-4-7
Grade：-
Qualification：-

RF Diode datasheet and documents for BAT15-098LRH

BAT15-098LRH

RF Diode Overview

The BAT15-098LRH is a silicon Schottky diode array manufactured by Infineon Technologies, designed for high-frequency applications. It features a low barrier voltage and is housed in the TSLP4 surface-mount package. The device supports dual parallel configuration with a maximum repetitive reverse voltage of 4 V and a forward current of 110 mA. It exhibits a typical forward voltage of 410 mV and a reverse current of 5 uA. Operating temperatures range from -55 C to +150 C. The component is RoHS compliant and qualified under AEC-Q100 standards.

RF Diode Feature Summary

Low barrier type optimized for DBS mixer applications up to 12 GHz
Designed for phase detectors and modulators with low noise figure
Dual parallel Schottky diode configuration in compact SMD package

RF Diode Applications

DBS mixer applications
Phase detectors
Modulators

RF Diode Procurement Notes

Verify the specific ordering suffix E6327 when sourcing to ensure correct packaging and tape-and-reel specifications. Confirm that the procurement channel provides official Infineon documentation or authorized distributor status to guarantee authenticity. Check for AEC-Q100 qualification requirements if the application demands automotive-grade reliability standards before finalizing purchase orders.

RF Diode Selection Notes

Select this component for RF circuits requiring low barrier voltage and high-speed switching capabilities. Ensure the operating frequency does not exceed 12 GHz to maintain optimal performance characteristics. Verify that the thermal management design accommodates the specified junction temperature limits. Consider the TSLP4 footprint constraints during PCB layout to ensure proper soldering and heat dissipation.

RF Diode Part Context

This part belongs to the BAT15 series of silicon Schottky diodes from Infineon Technologies. The series focuses on low-barrier devices suitable for microwave and RF applications. It complements other components in the lineup by offering specialized configurations for mixing and detection tasks. The technology leverages advanced silicon processing to achieve low noise figures and fast response times.