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BAT1504WH6327XTSA1 is listed in the RF Diode range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE SCHOTTKY 4V 100MW SOT323-3. Review the specifications below when checking this part for your BOM.
The Infineon BAT1504WH6327XTSA1 is a silicon RF Schottky diode pair featuring an integrated on-chip guard ring for over-voltage protection. Housed in the industry-standard SOT-323-3 package, it operates within a temperature range of -55 °C to +150 °C. Key electrical parameters include a maximum reverse voltage (VR) of 4 V and a forward current (IF) rating of 110 mA. The device exhibits a typical junction capacitance of 0.3 pF at 1 MHz and a typical inductance of 1.4 nH. It supports a total power dissipation of 100 mW with a maximum junction temperature of 150 °C.
Verify the specific ordering code against official Infineon documentation to ensure correct component selection. Confirm that the required packaging format matches the standard reel quantity of 3 k pieces. Ensure handling precautions are observed as the device is sensitive to electrostatic discharge.
Select this component when designing circuits requiring low-capacitance Schottky diodes for frequencies up to 12 GHz. The dual series configuration is ideal for balanced mixer topologies. Verify thermal management requirements against the specified thermal resistance values for the intended operating conditions.
This part belongs to the BAT15 series of silicon RF Schottky diodes from Infineon Technologies. It is specifically engineered for radio frequency applications where low parasitic elements are critical. The product is qualified for industrial applications according to JEDEC standards.
No public confirmed substitute part numbers are documented in the provided datasheet.
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