BAT1704WH6327XTSA1

RF Diode Overview

The Infineon BAT1704WH6327XTSA1 is a Schottky barrier diode designed for radio frequency applications. It features a dual series configuration housed in a PG-SOT323-3 surface-mount package. The device supports a maximum repetitive peak reverse voltage of 4 V and an average forward current of 130 mA, with a maximum power dissipation of 150 mW. Key electrical characteristics include a junction capacitance of 0.75 pF at 0 V bias and 1 MHz frequency, alongside a dynamic resistance of 15 ohms measured at 5 mA and 10 kHz. The component operates within a temperature range from -55°C to +150°C.

RF Diode Feature Summary

• Dual series configuration optimized for RF signal processing
• Ultra-low junction capacitance suitable for high-frequency operation
• Compact SOT-323-3 surface-mount packaging for space-constrained designs

RF Diode Applications

• RF mixing and detection circuits
• High-frequency switching applications
• Signal demodulation stages

RF Diode Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with standard SMT assembly processes for the PG-SOT323-3 footprint. Cross-reference the full part number with authorized distributors to validate authenticity and traceability before procurement.

RF Diode Selection Notes

Select this component when low capacitance is critical for maintaining signal integrity in RF paths. The dual series arrangement allows for balanced circuit topologies without requiring discrete components. Verify that the 4 V reverse voltage rating aligns with the peak signal levels in the target application to prevent breakdown.

RF Diode Part Context

This part belongs to the BAT1704 series of RF Schottky diodes manufactured by Infineon Technologies. The series is engineered specifically for high-speed switching and rectification tasks where minimal parasitic capacitance is required. The WH6327XTSA1 designation indicates the specific packaging and reel configuration used for automated manufacturing.

RF Diode Replacement Considerations

Direct substitutes must match the 4 V rating, 130 mA current capacity, and dual series topology. Verify that alternative components offer comparable capacitance values below 1 pF to maintain RF performance. Confirm package compatibility with the PG-SOT323-3 footprint.