BAT6202LSE6327XTSA1

RF Diode Overview

The BAT6202LSE6327XTSA1 is a single Schottky barrier diode manufactured by Infineon Technologies, designed for radio frequency applications. It utilizes silicon technology and is housed in a TSSLP-2 package, also identified as PG-TSSLP-2-1 or 0201 (0603 metric). The device features a maximum repetitive peak reverse voltage of 40V and a maximum forward current of 20 mA. Its power dissipation capability is rated at 100 mW, with a junction temperature limit of 150°C. At 0V bias and 1MHz frequency, the capacitance is specified as 0.6pF. This component is currently classified as obsolete.

RF Diode Feature Summary

• Single Schottky configuration optimized for RF signal processing
• Ultra-small surface-mount footprint suitable for high-density layouts
• Low junction capacitance supporting high-frequency operation

RF Diode Applications

• RF mixing circuits
• Detector stages in communication systems
• Switching applications in mobile devices

RF Diode Procurement Notes

This component is officially marked as obsolete by the manufacturer. Procurement is restricted to existing stock from distributors or secondary markets. Verify authenticity carefully due to potential availability of refurbished or counterfeit units. Lead times are unpredictable, and long-term supply continuity cannot be guaranteed. Designers should initiate replacement strategies immediately.

RF Diode Selection Notes

Engineers requiring this specific part number must evaluate alternative components due to its discontinued status. When selecting a substitute, ensure compatibility with the original 40V reverse voltage rating and 20mA current capacity. Verify that the replacement offers comparable low capacitance characteristics for RF performance. Confirm that the new package dimensions fit the existing PCB footprint or adjust layout accordingly.

RF Diode Part Context

The BAT6202 series represents Infineon's line of small-signal Schottky diodes intended for RF and microwave applications. The LS suffix typically denotes specific packaging or binning variations within the broader BAT62 family. These diodes are characterized by low forward voltage drop and fast switching speeds, making them suitable for detection and mixing tasks in consumer electronics and telecommunications equipment.