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The BAT64SW-7-F is a surface mount Schottky Barrier Diode manufactured by Diodes Incorporated. It features a single diode configuration housed in an SOT323 package. The device supports a peak repetitive reverse voltage of 40 V and an average rectified output current of 250 mA. Electrical characteristics include a maximum forward voltage of 750 mV at 100 mA and a maximum reverse leakage current of 2.0 µA at 40 V. The component operates within a junction temperature range of -65°C to +150°C.
Verify the specific ordering suffix matches the required packaging quantity, as standard tape and reel options exist for different unit counts. Confirm compliance with relevant environmental directives such as RoHS 3 and halogen-free definitions before procurement. Ensure the sourcing channel is authorized to guarantee product authenticity and traceability. Check for any recent engineering change notices that may affect mechanical or electrical specifications.
Select this component when a compact SOT323 footprint is required for space-constrained designs. Choose this part for applications demanding high reliability in automotive environments due to its AEC-Q101 qualification. Consider the 40 V reverse voltage rating and 250 mA current capacity to ensure adequate headroom for the target circuit conditions. Evaluate the thermal resistance and power dissipation limits against the expected operating ambient temperature.
This component belongs to the BAT64W/AW/CW/SW family of surface mount Schottky barrier diodes from Diodes Incorporated. All variants share identical electrical ratings but differ in internal pin configurations or specific application optimizations. The BAT64SW-7-F specifically denotes the single diode version packaged in a 3000-unit tape and reel format.
BAT64W-7-F
The maximum reverse recovery time is 3.0 ns under test conditions of IF = IR = 10mA.
Yes, the component is qualified to AEC-Q101 standards for high reliability, making it suitable for automotive electronics.
The typical total capacitance is 6.0 pF when measured at VR = 1V and f = 1.0MHz.