BAT6804E6327HTSA1

RF Diode Overview

The BAT6804E6327HTSA1 is a silicon Schottky diode from the BAT68 series, manufactured by Infineon Technologies. It features a dual series configuration housed in an SOT-323-3 surface-mount package. The device supports a maximum diode reverse voltage of 8 V and a forward current of 130 mA. Key electrical parameters include a typical forward voltage of 390 mV at 10 mA and a maximum reverse current of 1.2 µA at 60 °C. It operates within a junction temperature range of -55 °C to +150 °C and has a total power dissipation rating of 150 mW.

RF Diode Feature Summary

• Designed for mixer applications in the VHF/UHF range
• Suitable for high-speed switching applications
• Pb-free compliant with RoHS standards

RF Diode Applications

• Mixer circuits in VHF/UHF frequency ranges
• High-speed switching applications

RF Diode Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm datasheet revision and package marking codes match the specific order code. Ensure storage conditions adhere to moisture sensitivity levels to prevent soldering defects during assembly.

RF Diode Selection Notes

Select this component when low capacitance and fast switching are required for RF mixing or signal processing. The SOT-323-3 package offers space efficiency for compact designs. Verify that the 8 V reverse voltage rating aligns with circuit peak inverse voltage requirements.

RF Diode Part Context

This part belongs to the BAT68 series of silicon Schottky diodes. The series includes various configurations such as single, series, common anode, and parallel pairs across packages like SOT-23, SOT-323, and SOT-363. The BAT6804 variant specifically provides a dual series arrangement optimized for balanced mixer topologies.

RF Diode Replacement Considerations

Check pinout compatibility and electrical ratings against alternatives. Verify if other BAT68 series variants (e.g., BAT68-06) meet the specific series configuration needs. Ensure thermal resistance characteristics are comparable for similar power dissipation environments.