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The BAT74,215 is a planar Schottky barrier double diode featuring an integrated guard ring for stress protection. It encapsulates two electrically isolated Schottky barrier diodes in a small SOT143B Surface-Mounted Device plastic package. The device supports a forward current of 200 mA and a reverse voltage of 30 V per diode. Forward voltage reaches 800 mV at 100 mA, with a non-repetitive peak forward current capability of 600 mA. Total power dissipation is rated at 230 mW at 25 °C ambient temperature.
Verify the specific ordering suffix to confirm manufacturing origin and compliance status. Confirm RoHS and REACH alignment with project requirements. Check the latest Nexperia product data sheet for any updates to limiting values or thermal characteristics before finalizing design specifications.
Select this component for applications requiring dual Schottky isolation in a compact footprint. Ensure operating conditions remain within the specified junction temperature range of -65 °C to +125 °C. Consider the 5 nS reverse recovery time for high-frequency switching designs.
This part belongs to the Nexperia Schottky barrier double diode family. It utilizes planar technology for robust performance. The SOT143B package provides four leads for efficient surface-mount integration. It serves as a standard solution for low-voltage rectification and signal processing tasks.
BAT74S,115
The maximum non-repetitive peak forward current (IFSM) is 600 mA for a pulse duration less than 10 ms.
If both diodes operate in forward mode simultaneously, the total device current is limited to 110 mA. If one diode is reverse-biased while the other is forward-biased, the limit is 200 mA.
The typical diode capacitance (Cd) is 10 pF, measured at a reverse voltage of 1 V and a frequency of 1 MHz.