BAV170/ZLR

BAV170/ZLR

  • Description:DIODE ARRAY GP 75V 215MA SOT23
  • Series:-

SKU:a70c110f73a7 Category: Brand:

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Product Detailed Parameters

  • Description:DIODE ARRAY GP 75V 215MA SOT23
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):75 V
  • Current - Average Rectified (Io) (per Diode):215mA (DC)
  • Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):3 µs
  • Current - Reverse Leakage @ Vr:5 nA @ 75 V
  • Operating Temperature - Junction:150°C (Max)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23 (TO-236AB)
  • Grade:-
  • Qualification:-

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BAV170/ZLR

Overview

The BAV170/ZLR is a general-purpose diode array manufactured by NXP USA Inc., featuring two epitaxial diodes in a common cathode configuration within a compact SOT-23 (TO-236-3) surface-mount package. It is designed for medium-speed switching applications with a maximum reverse voltage rating of 75 V and a DC forward current capacity of 215 mA. The device exhibits low leakage characteristics, specified at 5 nA reverse current, and maintains a forward voltage drop of approximately 1.25 V. With a recovery time of 3 microseconds, it balances efficiency and speed for standard signal processing tasks.

Feature Summary

  • Epitaxial construction ensures stable performance across operating conditions
  • Common cathode configuration simplifies circuit layout for dual-diode requirements
  • Low-leakage design minimizes power loss in high-impedance states
  • Compact SOT-23 packaging enables space-efficient surface-mount integration

Applications

  • General-purpose signal switching circuits
  • Logic level translation interfaces
  • Protection diodes in consumer electronics
  • Medium-speed rectification in portable devices

Procurement Notes

Verify the component authenticity by cross-referencing the part number BAV170/ZLR with official NXP documentation. Confirm that the datasheet matches the specific electrical parameters, including the 75 V reverse voltage and 215 mA current ratings. Ensure the package type corresponds to SOT-23/TO-236-3 as specified. Check for RoHS compliance status if required by your manufacturing standards. Do not rely on distributor descriptions alone; validate against the manufacturer's product data sheet.

Selection Notes

Select this component when a dual-diode solution with common cathode topology is required in a small form factor. It is suitable for applications needing moderate switching speeds around 3 microseconds rather than ultra-fast recovery. Consider the 75 V breakdown voltage limit for reverse bias scenarios. The low leakage current makes it appropriate for sensitive analog or digital interfaces where minimal standby current is critical. Evaluate thermal constraints given the small plastic SMD package size.

Part Context

The BAV170 belongs to NXP’s family of low-leakage double diodes, often used in place of discrete diodes to save board space. Variants like BAV170/ZLVL offer similar specifications with different tape-and-reel configurations. The Z suffix typically indicates a specific packaging or reel option defined by NXP. This series replaces older discrete solutions in modern consumer electronics and industrial control systems requiring reliable medium-speed switching.

Replacement Considerations

Direct substitutes include BAV170/ZLVL from NXP, which shares identical electrical characteristics but may differ in packaging quantity. Other equivalents such as BAV170E6327 from Infineon are functionally comparable. Verify pinout compatibility and thermal resistance before substitution. Ensure the replacement meets the same 75 V and 215 mA ratings.

BAV170/ZLRBAV170/ZLR

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