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The BAV70-E3-08 is a small signal switching diode featuring a dual common cathode configuration in an SOT-23 package. It utilizes silicon epitaxial planar technology and operates within a temperature range of -55 °C to +150 °C. Key electrical parameters include a peak reverse voltage (VRRM) of 70 V, a continuous forward current (IF) of 350 mA, and a maximum reverse current (IR) of 100 nA at 70 V. The device exhibits a typical reverse recovery time (trr) of 6 ns and a diode capacitance (CD) of 1.5 pF at 0 V reverse bias.
Verify the specific ordering code suffix against project requirements. Confirm that the commercial grade designation aligns with environmental compliance standards. Ensure the tape and reel packaging dimensions match automated placement equipment specifications before finalizing procurement orders.
Select this component for designs requiring fast switching speeds and low capacitance in a compact surface-mount footprint. Evaluate thermal resistance characteristics relative to the intended PCB copper area. Consider the common cathode topology when designing multi-diode logic or protection circuits.
This part belongs to the Vishay BAV70 series of small signal switching diodes. It is manufactured using silicon epitaxial planar technology and housed in the standard SOT-23 surface-mount case. The product line includes variants qualified for automotive applications under AEC-Q101 standards.
BAV70-HE3_A-08
No, the BAV70-E3-08 is a commercial grade device. Automotive qualification requires the BAV70-HE3_A variant.
The typical reverse recovery time (trr) is 6 ns, measured under specific test conditions of IF = 10 mA to iR = 1 mA.