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The BAV70LT3G is a dual common cathode switching diode manufactured by onsemi in an SOT-23 package. It features a maximum reverse voltage of 100 V and a forward current rating of 200 mA per diode. The device exhibits a maximum reverse recovery time of 6 ns and a forward voltage of 1.25 V at 150 mA. Total power dissipation reaches 300 mW on an alumina substrate, with a junction-to-ambient thermal resistance of 417 °C/W. Operating temperatures range from -55°C to +150°C.
Verify the specific ordering suffix 'LT3' corresponds to the required tape and reel quantity of 10,000 units as documented in the official datasheet. Confirm that the 'L' prefix meets any site-specific or control change requirements mandated by your supply chain protocols before finalizing procurement orders.
Select this component when a dual common cathode arrangement is required within a small surface-mount footprint. Ensure the design accommodates the 100 V reverse voltage limit and the 200 mA forward current constraint. Consider the 6 ns recovery time for high-speed signal processing needs where standard rectifiers would introduce excessive delay.
This part belongs to the BAV70L series of silicon junction switching diodes produced by onsemi. It utilizes the SOT-23 (TO-236) case style 9 pinout configuration. The device is designed for general-purpose switching applications requiring fast response times and reliable performance across a wide temperature range.
BAV70LT1G serves as a functional substitute with identical electrical characteristics but differs in shipping packaging quantity.