BAW 56 E6433

Overview

The BAW 56 E6433 is a silicon switching diode array manufactured by Infineon Technologies. It features a dual common anode configuration housed in an SOT-23-3 surface-mount package. The device supports a maximum DC reverse voltage of 80V and an average forward current of 200mA. Key electrical characteristics include a peak repetitive reverse current of 100mA and a maximum reverse leakage current of 1uA at the rated voltage. The component operates within a temperature range of -55°C to +150°C, with a typical junction capacitance of 10pF.

Feature Summary

• Dual common anode diode configuration for efficient circuit design
• High thermal stability supporting extended operating temperatures up to 150°C
• Low leakage current characteristics suitable for precision signal applications

Applications

• General purpose signal switching circuits
• Logic level interface protection
• Clamping and rectification in low-power electronics

Procurement Notes

Verify the specific suffix E6433 to ensure correct tape-and-reel packaging compatibility. Confirm RoHS compliance status through official documentation prior to integration. Cross-reference the manufacturer part number against authorized distributor lists to validate authenticity and traceability. Ensure storage conditions respect humidity sensitivity levels defined in the datasheet.

Selection Notes

Select this component when a compact dual-diode solution with high voltage tolerance is required. The SOT-23-3 package offers space efficiency for dense PCB layouts. Consider the 80V reverse voltage rating for appropriate margin in low-voltage logic systems. Evaluate the 200mA current capacity against load requirements to prevent thermal overload during continuous operation.

Part Context

This part belongs to Infineon's standard small-signal diode portfolio, designed for general-purpose switching tasks. The BAW series provides reliable performance in consumer and industrial electronics. The E6433 suffix denotes specific manufacturing and packaging parameters distinct from other variants in the family.

Replacement Considerations

• BAW56
• BAW56U

FAQ

What is the pin configuration of the BAW 56 E6433?

The device utilizes a common anode configuration where Pin 1 serves as the shared anode for both cathodes located on Pins 2 and 3.

Is the BAW 56 E6433 suitable for high-frequency applications?

Yes, the component exhibits a typical junction capacitance of 10pF, making it appropriate for standard signal switching frequencies.