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BAW56WE6433 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE ARR GP 80V 200MA SOT323-3. Review the specifications below when checking this part for your BOM.
The BAW56WE6433 is a small signal switching diode manufactured by Infineon Technologies. It features a dual configuration housed in an SOT-23 package. Key electrical parameters include a peak reverse voltage of 70 V, a maximum forward current of 200 mA, and a maximum reverse leakage current of 5 nA. The device exhibits a forward voltage of 1.25 V and operates within a temperature range of -65 °C to +150 °C. Power dissipation is rated at 250 mW.
Verify the specific suffix E6433 against official Infineon documentation to confirm exact tape-and-reel specifications and RoHS compliance status. Ensure the component matches the required SOT-23 footprint and pinout for your design. Cross-reference datasheet revisions to confirm active status or obsolescence notices prior to finalizing procurement plans.
Select this component when a low-leakage dual diode solution is required in a minimal surface-mount footprint. The SOT-23 package offers space efficiency for dense PCB layouts. Verify that the 70 V reverse voltage rating meets the circuit's peak inverse voltage requirements and that the 200 mA forward current capacity aligns with load expectations.
This part belongs to the BAS/BAV series of small signal silicon switching diodes from Infineon. These components are designed for general-purpose high-speed switching applications. The BAW56 variant specifically emphasizes low leakage performance compared to standard switching diodes, making it distinct within the broader family of rectifier and switching devices offered by the manufacturer.
Check for direct cross-reference part numbers from Infineon or other manufacturers offering identical SOT-23 dual diode specifications with matching 70 V and 200 mA ratings. Verify pin compatibility and thermal characteristics before substitution.
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