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The BB659C-02V is a single silicon variable capacitance diode manufactured by Infineon Technologies, designed for tuning extended frequency bands in VHF TV and VTR tuners. It utilizes the SC79 surface-mount package with a low series inductance of 0.6 nH. The device supports a maximum reverse voltage of 30 V and a peak reverse voltage of 35 V. At 1 MHz, it exhibits a typical capacitance of 2.4 pF at 28 V reverse bias and 36.5 pF at 1 V. The component achieves a high capacitance ratio of 15.3 (CT1/CT28) and maintains a low series resistance of 0.6 Ω at 470 MHz.
Verify the specific ordering suffix against official documentation to confirm package type and marking details. Confirm availability status as components may be discontinued or subject to supply constraints. Ensure compliance with RoHS standards if required for the target application environment.
Select this component when a high capacitance ratio and low parasitic inductance are critical for VHF tuner performance. Compare the SC79 package dimensions against PCB layout requirements. Evaluate the capacitance tolerance and matching specifications against circuit sensitivity needs.
This part belongs to the BB639C/BB659C series of silicon variable capacitance diodes from Infineon Technologies. The series includes variants such as BB639C and BB659C, differentiated primarily by their packaging configurations and specific electrical characteristics tailored for tuner applications.
Consult the manufacturer's datasheet for direct cross-references within the BB639C/BB659C family. Verify pinout compatibility and package dimensions before substituting with other varactor diodes.