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The BB659C-02V E7912 is a silicon variable capacitance diode manufactured by Infineon Technologies. It is housed in the SC79 surface-mount package and features a single diode configuration with a maximum reverse voltage of 30 V and a peak reverse voltage of 35 V. The component operates within a temperature range of -55°C to 150°C. At 1 MHz, it exhibits a typical capacitance ratio of 15.3 (measured between 1 V and 28 V) and a series resistance of 0.6 Ω at 470 MHz.
Verify the specific ordering suffix against official documentation to confirm package type and marking details. Confirm RoHS compliance status and lead times directly with authorized distributors or Infineon sales offices before placing orders.
Select this component when a high capacitance ratio and low series inductance are required for VHF applications. Ensure the operating temperature range aligns with system requirements and verify that the SC79 package dimensions fit the PCB layout constraints.
This part belongs to the BB639C/BB659C series of silicon variable capacitance diodes from Infineon Technologies. The series includes variants such as BB639C and BB659C, differentiated primarily by their packaging options like SOD323, SCD80, and SC79.
Consult the official datasheet for direct replacements. Verify compatibility regarding package dimensions, electrical characteristics, and marking codes before substituting.