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The BB304CDW-TL-E is a VHF RF amplifier IC manufactured by Renesas Electronics Corporation. It features a built-in biasing circuit and MOS FET technology, packaged in the SC-82 (CMPAK-4) format with four pins. The device operates on a supply voltage ranging from 5V to 9V. Key electrical parameters include a minimum drain-source breakdown voltage of 12V and a maximum drain current of 0.025A. It exhibits high gain, typically 29dB at 200MHz, and low noise characteristics, with a noise figure of 1.2dB at 200MHz. The component includes an internal ESD absorbing diode capable of withstanding up to 200V under specific test conditions.
Verify the exact suffix 'DW-TL-E' against official Renesas documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives as the base part may contain lead. Confirm availability status directly with authorized distributors or Renesas sales channels prior to ordering.
Select this component for designs requiring integrated biasing in a compact form factor. Consider the 12V breakdown voltage and 25mA current limit when designing power stages. Evaluate the 29dB gain and 1.2dB noise figure against system link budget requirements at 200MHz. Ensure the 5V to 9V supply range aligns with the target application's power architecture.
The BB304C belongs to the Renesas BBFET series of MOS FET ICs designed for VHF applications. This series emphasizes cost reduction and space efficiency through integrated biasing solutions. The BB304CDW-TL-E variant specifically denotes the SC-82 package configuration within this product line.
Consult official Renesas substitution guides for verified alternatives. Cross-reference pinouts and electrical characteristics carefully when considering third-party equivalents to ensure compatibility with existing VHF circuit designs.