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The BB502CBS-TL-H is an RF N-channel MOSFET manufactured by Renesas Electronics Corporation. It is designed for radio frequency applications requiring high performance and reliability. The component features a drain-to-source breakdown voltage specification tested at a drain current of 200 μA under standard ambient temperature conditions (Ta = 25°C). This device serves as a critical active element in RF signal processing circuits, providing necessary switching and amplification capabilities within its operational parameters.
Verify the specific datasheet version and electrical characteristics against your design requirements before procurement. Confirm that the component status aligns with your production timeline needs. Ensure compatibility with your existing RF circuit topology and thermal management strategies. Cross-reference pinouts and package dimensions to guarantee mechanical fit within your assembly constraints.
Select this component when designing RF circuits that require an N-channel MOSFET with specific breakdown voltage ratings. Consider the operating frequency range and thermal dissipation requirements of your application. Evaluate the trade-offs between performance metrics and available alternatives if this part is obsolete or limited in supply. Ensure the package type matches your PCB layout specifications.
This component belongs to the RF FET family from Renesas Electronics Corporation. It is categorized alongside other radio frequency field-effect transistors used in high-frequency electronic systems. The product line focuses on providing robust solutions for RF signal processing, supporting various communication and sensing technologies that rely on precise RF control and amplification.
Public sources indicate the BB502CBS-TL-H may be obsolete. Verify availability through authorized distributors. Consult official cross-reference lists for direct replacements. Ensure any substitute maintains identical RF performance characteristics and package dimensions to avoid redesign efforts.