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The BB659C02VH7908XTSA1 is a silicon variable capacitance diode designed for tuning extended frequency bands in VHF TV and VTR tuners. It features a single configuration in an SCD80 package with low series inductance of 0.6 nH and series resistance of 0.6 Ω typical. The device supports a maximum reverse voltage of 30 V and peak reverse voltage of 35 V, with a forward current rating of 20 mA. Capacitance ranges from 36.5 pF at 1 V to 2.4 pF at 28 V (typical), yielding a capacitance ratio of 15.3 at 1 MHz.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm RoHS compliance and Pb-free status as specified in the datasheet. Check for end-of-life status and availability of replacement parts if necessary. Ensure storage conditions meet the specified temperature range to maintain component integrity.
Select this component when high capacitance ratio and low parasitic elements are required for VHF applications. Consider the SCD80 package size and single-diode configuration for space-constrained designs. Evaluate the operating temperature range and reverse voltage ratings against circuit requirements.
This part belongs to the BB659C series of silicon variable capacitance diodes from Infineon Technologies. It shares characteristics with the BB639C but differs in packaging and specific electrical parameters. The series is optimized for tuner applications requiring precise capacitance control.
Check for direct replacements within the BB659C series or compatible varactors with similar capacitance ratios and package types. Verify pinout compatibility and electrical specifications before substitution.
The typical capacitance ratio (CT1/CT28) is 15.3 at 1 MHz.
It uses the SCD80 surface-mount package.
Yes, it is Pb-free and RoHS compliant.