BB804SF2E6327

BB804SF2E6327

$0.03
  • Description:VARIABLE CAPACITANCE DIODE
  • Series:-

SKU:a117a130641a Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:VARIABLE CAPACITANCE DIODE
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk
  • Capacitance @ Vr, F:47.5pF @ 2V, 1MHz
  • Capacitance Ratio:1.71
  • Capacitance Ratio Condition:C2/C8
  • Voltage - Peak Reverse (Max):18 V
  • Diode Type:1 Pair Common Cathode
  • Q @ Vr, F:200 @ 2V, 100MHz
  • Operating Temperature:-55°C ~ 125°C
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:PG-SOT23

Download product information

BB804SF2E6327

Overview

The BB804SF2E6327 is a dual NPN/BPN RF transistor pair manufactured by Infineon Technologies. It utilizes silicon planar technology and is housed in an SOT-363 surface-mount package. The device features a maximum collector-emitter voltage (VCEO) of 15 V for the NPN section and 10 V for the PNP section. Maximum DC collector currents are specified at 100 mA for both transistors. Power dissipation is rated at 300 mW, with a transition frequency (fT) of 6 GHz for the NPN and 5 GHz for the PNP. Operating temperatures range from -55 °C to +150 °C.

Feature Summary

  • Integrated dual-transistor configuration combining NPN and PNP structures in a single compact package
  • Optimized for high-frequency radio frequency applications with transition frequencies up to 6 GHz
  • Designed for low-voltage operation suitable for portable wireless communication devices

Applications

  • RF front-end modules in mobile handsets
  • Low-noise amplification stages in wireless communication systems
  • Signal processing circuits in cellular phone baseband units

Procurement Notes

Verify component authenticity through authorized Infineon distributors or certified supply chain partners. Confirm that the part number matches the exact suffix E6327 to ensure correct packaging and tape-and-reel specifications. Request original manufacturer documentation to validate RoHS compliance and traceability records before integration into production lines.

Selection Notes

Select this component when space-constrained designs require complementary NPN/PNP pairs for RF signal handling. Ensure the circuit operates within the 15 V and 10 V voltage limits for NPN and PNP sections respectively. Consider the 300 mW power dissipation limit and thermal management requirements for the SOT-363 package during PCB layout.

Part Context

This component belongs to Infineon's portfolio of discrete RF transistors designed for high-frequency analog and RF applications. It serves as a building block for amplifier stages and switching circuits in consumer electronics. The specific E6327 suffix indicates the standard tape-and-reel packaging format used for automated surface-mount assembly processes.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided reference data. Engineers should consult official Infineon replacement guides or contact technical support directly for qualified alternatives that match the electrical characteristics and pinout configuration.

BB804SF2E6327BB804SF2E6327
$0.03
Buy Now