BBY5302LE6327XTMA1

BBY5302LE6327XTMA1

  • Description:DIODE TUNING 6V 20MA TSLP-2
  • Series:-

SKU:42a60fec5ee1 Category: Brand:

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Product Detailed Parameters

  • Description:DIODE TUNING 6V 20MA TSLP-2
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Capacitance @ Vr, F:3.1pF @ 3V, 1MHz
  • Capacitance Ratio:2.6
  • Capacitance Ratio Condition:C1/C3
  • Voltage - Peak Reverse (Max):6 V
  • Diode Type:Single
  • Q @ Vr, F:-
  • Operating Temperature:-55°C ~ 125°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOD-882
  • Supplier Device Package:PG-TSLP-2-1

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BBY5302LE6327XTMA1

Overview

The BBY5302LE6327XTMA1 is a silicon hyperabrupt tuning diode manufactured by Infineon Technologies. It operates within a reverse voltage range of -55°C to 125°C and features a maximum diode reverse voltage of 6 V and forward current of 20 mA. At 1 MHz, the capacitance measures 4.8 pF at 1 V reverse bias and 1.85 pF at 3 V reverse bias. The device exhibits a typical capacitance ratio of 2.2 between 1 V and 3 V. Series resistance is typically 0.47 Ω at 1 GHz. The component utilizes a TSLP-2-1 leadless package.

Feature Summary

  • High Q hyperabrupt characteristic optimized for low tuning voltage operation in VCO applications
  • Designed specifically for mobile communications equipment requiring high capacitance ratios at low reverse voltages

Applications

  • Voltage Controlled Oscillators (VCOs) in mobile communications equipment
  • Frequency tuning circuits requiring high Q factors
  • Low voltage tuning applications

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm the exact package type and marking configuration. Ensure that the requested variant matches the required leadless or standard package format before finalizing procurement orders.

Selection Notes

Select this component when designing circuits that require hyperabrupt capacitance-voltage characteristics for efficient frequency modulation. Consider the 6 V reverse voltage limit and the specific capacitance values at 1 V and 3 V to ensure compatibility with the target oscillator's tuning range requirements.

Part Context

This part belongs to the BBY53 series of silicon tuning diodes from Infineon Technologies. The series includes variants such as BBY53-02L, BBY53-02V, and BBY53-02W, which differ primarily in their physical packaging configurations like SOT23, SC79, and SCD80 while maintaining similar electrical performance profiles.

Replacement Considerations

Consult official Infineon cross-reference lists for verified substitutes. Generic RF varactors may not replicate the specific hyperabrupt capacitance curve required for precise VCO tuning applications.

FAQ

What is the typical capacitance ratio for this diode?

The typical capacitance ratio (CT1/CT3) measured at 1 V and 3 V reverse bias with a frequency of 1 MHz is 2.2.

What is the maximum operating temperature?

The maximum operating temperature for the BBY5302LE6327XTMA1 is 125 °C.

What is the package type for this specific model?

The BBY5302LE6327XTMA1 utilizes the TSLP-2-1 leadless package configuration.

BBY5302LE6327XTMA1BBY5302LE6327XTMA1

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