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The BBY5302LE6327XTMA1 is a silicon hyperabrupt tuning diode manufactured by Infineon Technologies. It operates within a reverse voltage range of -55°C to 125°C and features a maximum diode reverse voltage of 6 V and forward current of 20 mA. At 1 MHz, the capacitance measures 4.8 pF at 1 V reverse bias and 1.85 pF at 3 V reverse bias. The device exhibits a typical capacitance ratio of 2.2 between 1 V and 3 V. Series resistance is typically 0.47 Ω at 1 GHz. The component utilizes a TSLP-2-1 leadless package.
Verify the specific ordering suffix against official Infineon documentation to confirm the exact package type and marking configuration. Ensure that the requested variant matches the required leadless or standard package format before finalizing procurement orders.
Select this component when designing circuits that require hyperabrupt capacitance-voltage characteristics for efficient frequency modulation. Consider the 6 V reverse voltage limit and the specific capacitance values at 1 V and 3 V to ensure compatibility with the target oscillator's tuning range requirements.
This part belongs to the BBY53 series of silicon tuning diodes from Infineon Technologies. The series includes variants such as BBY53-02L, BBY53-02V, and BBY53-02W, which differ primarily in their physical packaging configurations like SOT23, SC79, and SCD80 while maintaining similar electrical performance profiles.
Consult official Infineon cross-reference lists for verified substitutes. Generic RF varactors may not replicate the specific hyperabrupt capacitance curve required for precise VCO tuning applications.
The typical capacitance ratio (CT1/CT3) measured at 1 V and 3 V reverse bias with a frequency of 1 MHz is 2.2.
The maximum operating temperature for the BBY5302LE6327XTMA1 is 125 °C.
The BBY5302LE6327XTMA1 utilizes the TSLP-2-1 leadless package configuration.