BBY5305WE6327HTSA1

Overview

The BBY5305WE6327HTSA1 is a silicon hyperabrupt tuning diode manufactured by Infineon Technologies. It operates with a maximum reverse voltage of 6 V and a forward current of 20 mA. The device provides a typical capacitance of 5.3 pF at 1 V reverse bias and 2.4 pF at 3 V, yielding a capacitance ratio of 2.2. It features a series resistance of 0.47 Ω at 1 GHz and functions within an operating temperature range of -55°C to 125°C.

Feature Summary

• High Q factor hyperabrupt junction designed for low tuning voltage operation in VCO applications
• Optimized high capacitance ratio at low reverse voltages for efficient frequency modulation
• Lead-free packaging compliant with RoHS standards

Applications

• Voltage Controlled Oscillators (VCOs) in mobile communications equipment
• RF tuning circuits requiring low voltage operation
• Frequency modulation modules

Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm the specific package marking and date code against the datasheet specifications. Ensure storage conditions remain within the specified limits to maintain electrical integrity prior to assembly.

Selection Notes

Select this component when designing circuits requiring a high capacitance ratio at low reverse bias voltages. The 6 V rating suits low-voltage RF systems. Verify that the SOT-323 package dimensions align with the target PCB layout constraints and thermal requirements.

Part Context

This part belongs to the BBY53 series of silicon tuning diodes from Infineon. The 'W' suffix indicates the SOT-323 surface-mount package configuration. The E6327HTSA1 designation specifies the standard tape-and-reel packaging format used for automated surface-mount assembly processes.

Replacement Considerations

Compatible substitutes include other parts from the BBY53 series such as BBY53-02L, BBY53-02V, BBY53-02W, BBY53-03W, and BBY53-05W, provided they match the required package type and electrical characteristics.