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The BBY5702VH6327XTSA1 is a silicon tuning diode from the BBY57 series, designed for low tuning voltage operation in mobile communications equipment. It features high Q hyperabrupt characteristics and excellent linearity with low series resistance. The component operates within a temperature range of -55°C to 125°C and is qualified according to AEC-Q101 standards. Key electrical parameters include a maximum reverse voltage of 10 V and a forward current rating of 20 mA. At 1 MHz, the capacitance ranges from 4 pF at 4 V to 16.5 pF at 1 V, providing a capacitance ratio of up to 4.5.
Verify component authenticity through authorized Infineon channels or certified distributors. Confirm package integrity and date codes upon receipt. Ensure storage conditions remain within specified limits to maintain reliability. Check for RoHS compliance documentation if required by specific manufacturing regulations.
Select this variant when low tuning voltage operation is required for VCO designs. The SC-79 package suits surface mount applications needing compact footprints. Verify that the 10 V reverse voltage rating aligns with circuit bias requirements. Consider the AEC-Q101 qualification for automotive integration needs.
This part belongs to the BBY57 series of silicon tuning diodes manufactured by Infineon Technologies. The series includes variants like BBY57-02L, BBY57-02W, and BBY57-05W, differing primarily in package type and inductance specifications. The BBY5702VH6327XTSA1 specifically utilizes the SC-79 package configuration.
BBY5702WH6327XTSA1 is listed as a similar replacement option.